ITS08C06B Search Results
ITS08C06B Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ITS08C06B | Mitel Semiconductor | Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode | Scan | 461.72KB | 10 |
ITS08C06B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DS4737-4
Abstract: T0247 ac ITS08C06B ITS08C06P ITS08C08A T0247
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its08c06ds4737-3ds4737-4t0220+6 | |
DS4737-4Contextual Info: /t7k M ITEL ITS08C06 SE M IC O N D U C T O R Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for |
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ds4737-3its08c06ds4737-4 | |
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Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4737-2.2 ITS08C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage |
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ds4737-2its08c06 |