ITR07586 Search Results

A1076

Abstract: IC 4073 IC 2732 ITR07582 ITR07583 ITR07584 ITR07585 ITR07586 A10764 2SC4853A
Contextual Info: 2SC4853A 注文コード No. N A 1 0 7 6 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC4853A 低電圧低電流高周波増幅用 特長 ・低電圧 , 低電流動作：fT=5GHz typ （VCE=1V, IC=1mA）：⏐S21e⏐2=7dB typ（f=1GHz）

A1076

Abstract: ITR07582 ITR07583 ITR07585
Contextual Info: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).

Contextual Info: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

NF 847 G

Abstract: NF 565 ic 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 ITR07585 61893HO IC 7428
Contextual Info: 注文コード No. N 4 5 7 8 A 2SC4853 No. N4578A 22800 半導体ニューズ No.4578 とさしかえてください。 2SC4853 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 低電圧低電流高周波増幅用 ・低電圧 , 低電流動作：fT=5GHz typ

MARKING CN

Abstract: ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor
Contextual Info: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).

Contextual Info: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)

Contextual Info: Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C