ITE08F06 Search Results
ITE08F06 Datasheets (1)
GEC Plessey Semiconductors
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ITE08F06 | GEC Plessey Semiconductors | Powerline N-Channel IGBT with Optional Ultrafast Diode | Scan | 266.89KB | 9 |
ITE08F06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ITE08F06
Abstract: "welding circuit " IGBT T0247 ITE08C06 Ultrasonic welding circuit 600V 200A igbt MOTOR SPEED CONTROL BO52
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Contextual Info: Si G E C PLESSEY S E M I C O N D U C T O R S PRELIMINARY INFORMATION DS4312 -1.2 ITE08F06/ITE08C06 POWERUNE N-CHANNEU IGBT WITH OPTIONAL ULTRAFAST DIODE The IT E 0 8X 06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IG BT designed for |
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ds4312ite08f06/ite08c0637bfl522002b372+3 |