ITE 8512 Search Results

3244

Abstract: PBA3244 RIFA 3244
Contextual Info: ERICSSON COMPONENTS INC SSE » 3 3 7 3 b êD O D O n iS □ ERICSSON T -é H -O S h y b rid e ire u ite PEA 3244 Data Sh@ t 20 kHz Low-pass CD-systems Introduction The hybrid circuit PBA 3244 is a low-pass filter with a cut-off frequency of 19.8 kHz. Excellent characteristics

Contextual Info: PRECAUTIONS IN SYSTEM DESIGN In the system design, the problems to be considered are described in the fo llo w in g items: 1. • Constant current area in which P and N channel MOS’ operate in the p in ch -o ff state. In designing a system including an interface c irc u it, the above

MT4C8512

Abstract: ITE 8512 MT4CB512
Contextual Info: M IC R O N 512K DRAM MT4C8512 X 8 DRAM 512K x 8 DRAM FAST PAGE MODE FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine colurnnaddresses • High-perform ance CM OS silicon-gate process • S in g le + 5 V ±10% power supply*

Contextual Info: EDI88512CA H i-REUÄBiUTY PRODUCT 512Kx8 Monolithic SRAM CMOS, SMD 5962-95600 FEATURES The ED I88512C A is a 4 m egabit M onolithic CM OS S tatic RAM. • 512Kx8 bit CM OS Static The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four m egabit device and is a replacem ent for the 5 1 2 K x 8

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / M E M H D 74H C 374 H D 74H C 534 I S D Ë J M a t a d a 1 5 1 3 fi • Octal D-type Flip-Flops with 3 -state outputs • Octal D-type Flip-Flops (with inverted 3 -state o u tp u ts ) 92D These devices are positive edge triggered flip-flo ps. The d if­

Contextual Info: Advance K M 6 8 5 1 2 B Fami l y D o c u m C M O S SR A M nt Title 6 4 K x 8 bit L o w P o w e r C M O S Static R A M R e v is io n H is to ry R e v is io n No. 0.0 H is to ry D raft D ata Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

ite 8512

Abstract: LA 8512
Contextual Info: ADVANCE M T4C 8 512/3 512K X 8 DR AM M IC R O N DRAM 512K x 8 DRAM FAST PAGE MODE • • • • • • • • OPTIONS Vcc [ 1 DQ1 [ 2 • M asked W rite N o t available A v ailab le P ack ages P lastic SO J 400 m il P lastic T SO P (400 m il) P lastic Z IP (375 m il)

Contextual Info: REV ORDER INFORMATION ECN NO. A APP. DATE N E W D E S IG N 1802 14 XX 4 X Ploting: 2: Selective Gold _ o _ J =\ No. Of Contact - 00: White 01: Black -Type Upright Front Flange TT 3.2 4 -0 0 .9 2 19.3 00 c c PCB LAYOUT (BOTTOM VIEW) 9.1

Contextual Info: Id HI i— f t :] u i 1 ' MW-16-03- F -D -235 -07 S -P i J j | N LJ u Cl I CH I M W -16—0 3 -F -D -1 85-125 M W -2 5 -0 3 -F -D -2 1 0-100 1 1 1 ; 'EDMfS / M W -1 0 -0 3 -L -D -1 50-160 IIj TIWWW' n GW M ates w itn : Specifications: MW CLM, MIE, Q C LM

Contextual Info: nx cli icon ALUMINUM ELECTROLYTIC CAPACITORS n ie lli cun MUSE SK 7mmL, For Audio Equipment For Aud & Use Anti-Soiverr Feaiure ‘ nictiicon MUSE” acoustic series, with 7mm height. FX Smaller; SK ISpecifications Performance Characteristics Item Operating Temperature Range

eaton el 198

Abstract: PCb board zd lty 2 PCb board zd lty 6 nte quick cross 14305H SMD MARKING CODE ALg 5302H F105 LA 4301 Z851 marking code
Contextual Info: Indicator Lights LED Optoelectronics • Incandescent • Neon For Surface Mount, PC Mount & Panel Mount TABLE OF CONTENTS SECTION 6 SECTION 1 Technical Notes Incandescent Lamps Neon Lamps O ptoelectronics Soldering Neon Glow Lamps 3 6 10 SECTION 2 IDI Product Line

FT152

Abstract: ft152 circuit TVPA
Contextual Info: ÜUU 1 ' *4 ê moîaïc 512 K X 8 FLASH EEPROM MFM8512G/J/S/V/W-12/15/20 Issue 1.0 : September 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r r Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read Low Power Standby TTL levels 55MW (max. @ 70°C)

tc514256

Abstract: TC51425
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 5 2 4 ,2 8 8 W O R D S x 8 B IT FAST PAGE M O D E T H M 8 5 1 2 8 /1 .-1 0 ,1 2 D Y N A M IC R A M M O D U LE DESCRIPTION The T H M 8 5 1 2 S /L is a 524,288 words by 8 bits d y­ namic RAM module which assembled 4 pcs o f TC514256J

TS8531

Abstract: R5609 R5611 R5612 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532
Contextual Info: T S 8 5X X SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER The TS 85X X c irc u its are HC M O S unive rsa l filte r s c o n ta in in g a m ask pro g ra m m a b le s w itch e d -ca p a c ito r cascadable s tru c tu re and tw o un co m ­ m itte d genera! purpose ope ra tio n a l am p lifie rs .

T40104

Abstract: diode c05*10 ND06 T 8512 H diode 74HCT40104
Contextual Info: _ File N um ber HARRIS Technical Data. CD54/74HC40104 CD54/74HCT40104 1661 SEMICOND SECTOR 27E ]> 4302271 0 0 10 0 2 0 2 1 3 HAS High-Speed CMOS Logic OUTPUT ENABLE 4-Bit Universal Bidirectional Shift Register DO­ DI- 02 03- Type Feature*:

Contextual Info: niCRON S E M I C O N D U C T O R INC L3E D • b 1 1 1 5 14^ 0 0 0 7 71 S ATI ■ URN ADVANCE MICRON ■ 512K SEMICONDUCTOR. INC. WIDE DRAM X MT4C8512/3S 8 WIDE DRAM 512K x 8 DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses

Contextual Info: PRELIMINARY MICRON I MT4C8512/3 512K X 8 WIDE DRAM •CmCOMOUCTCM. WC WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • In d ustry-stand ard x 8 pinouts, tim ing, functions and • • • • • • • • • p ackages A d d ress entry: ten row -addresses, nine colum nad dresses

Contextual Info: Raytheon Electronics Semiconductor Division TM C 22091/TM C 22191 Digital Video Encoders/Layering Engine • A ll-d ig ital v id eo e n co din g • Intern al d ig ital o scillato rs, no c ry stals req u ired • S y n ch ro n izes w ith T M C 22071 G e n lo ck in g V ideo

ITE 8512

Abstract: ge 8513 M992 MT4CB512
Contextual Info: ADVANCE M T4C 85 12/3 L 512K X 8 DRAM |v iic = R a i\j 512K x 8 DRAM LOW POWER, EXTENDED REFRESH PIN ASSIGNMENT Top View • Ind ustry stand ard x8 p in o u ts, tim in g , fu n ctio n s and packages • A d d ress en try: 1Ü row ad d resses, n in e colu m n

Contextual Info: IDT6198S IDT6198L CMOS STATIC RAM 64 K 1 6 K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: n iq u e s , p ro v id e s a c o s t-e ffe c tiv e a p p ro a c h fo r m e m o ry in te n ­ • O utput E nable (O E) pin available fo r added system flexibility

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

Contextual Info: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)

Contextual Info: ADVANCE WIDE DRAM 512K x 8 DRAM EXTENDED REFRESH SELF REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

P8253

Contextual Info: TOSHIBA TMP8253 PROGRAM M ABLE INTERVALTIM ER TMP8253P-5 1. GENERAL DESCRIPTION T he T M P 8253P -5 h e r e in a fte r re fe rre d to as T M P 8 2 5 3 is a p r o g ra m m a b le counter/tim er chip designed for use as th e TLCS-85A m icrocom puter p erip h e ra l. It is