IT14620 Search Results

mch3376

Contextual Info: MCH3376 Ordering number : ENA1564 SANYO Semiconductors DATA SHEET MCH3376 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

a1460

Abstract: SCH1330
Contextual Info: SCH1330 Ordering number : ENA1460A SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications

A1460

Abstract: SCH1330
Contextual Info: SCH1330 注文コード No. N A 1 4 6 0 A 三洋半導体データシート 半導体データシート No.NA1460 をさしかえてください。 SCH1330 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

Contextual Info: Ordering number : ENA1460B SCH1330 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 241mΩ, Single SCH6 Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in Specifications

Contextual Info: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode

Contextual Info: MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive

MCH6660-TL-H

Contextual Info: MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive

Contextual Info: Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.com Features • ESD diode-Protected gate • High speed switching and Low loss • Pb-free and RoHS Compliance • • Drive at low voltage:1.8V drive

Contextual Info: Ordering number : ENA1993A MCH6660 Power MOSFET http://onsemi.com 20V, 2A, 136mΩ, –20V, –1.5A, 266mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance

ENA2166

Contextual Info: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)

Contextual Info: Ordering number : ENA2165 MCH5839 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 266mΩ, Single MCPH5 with Schottky Diode Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting

Contextual Info: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

A1460

Abstract: SCH1330 ENA1460
Contextual Info: SCH1330 Ordering number : ENA1460 SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications

Contextual Info: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)

Contextual Info: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: SCH1330 Ordering number : ENA1460B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH1330 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in

Contextual Info: MCH6660 Ordering number : ENA1993 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6660 General-Purpose Switching Device Applications Features • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive

Contextual Info: SCH1330 Ordering number : ENA1460B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH1330 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in

a2165

Contextual Info: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode

Contextual Info: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: SCH1330 Ordering number : ENA1460A SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications