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    IT11717 Search Results

    IT11717 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC


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    3ln04chena1193900mm23ln04ch/d PDF

    3LN04MH

    Abstract: sy 360 diode
    Contextual Info: 3LN04MH Ordering number : ENA0550 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    3ln04mhena0550900mm2a0550-4/4+1sy 360 diode PDF

    A1193

    Abstract: 3ln04ch marking la IT1171
    Contextual Info: 3LN04CH Ordering number : ENA1193 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


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    3ln04chena1193pw10s900mm20+4a1193-4/4a1193marking lait1171 PDF

    Contextual Info: SCH2408 Ordering number : ENA1198 N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


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    sch2408ena1198900mm2sch2408/d PDF

    a1194

    Abstract: MOSFET IGSS 100A 3LN04S
    Contextual Info: 3LN04S Ordering number : ENA1194 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


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    3ln04sena1194pw10s145mm80mm1+3a1194-4/4a1194mosfet igss 100a PDF

    A1196

    Abstract: 3LN04SS 3ln04
    Contextual Info: 3LN04SS Ordering number : ENA1196 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    3ln04ssena1196pw10s145mm80mm1+3a1196-4/4a11963ln04 PDF

    A1195

    Contextual Info: MCH6650 注文コード No. N A 1 1 9 5 三洋半導体データシート N MCH6650 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    mch6650900mm2200ma100ma+3it11717it13627a1195 PDF

    a1198

    Abstract: 7028 NS A1198
    Contextual Info: SCH2408 Ordering number : ENA1198 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    sch2408ena1198pw10s900mm20+4a1198-4/4a11987028ns a1198 PDF

    mosfet xb

    Contextual Info: MCH6650 Ordering number : ENA1195 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6650 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    mch6650ena1195pw10s900mm20+2a1195-4/4mosfet xb PDF

    A1198

    Abstract: IT1171 NS A1198 IT11710
    Contextual Info: SCH2408 注文コード No. N A 1 1 9 8 三洋半導体データシート N SCH2408 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    sch2408900mm2200ma100ma+7it11717pw10sit13629a1198it1171ns a1198it11710 PDF

    Contextual Info: EC4409C Ordering number : ENA1197 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4409C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C


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    ec4409cena1197pw10s145mm80mm1+1a1197-4/4 PDF

    A1196

    Abstract: IT1171 3LN04SS IT11710
    Contextual Info: 3LN04SS 注文コード No. N A 1 1 9 6 三洋半導体データシート N 3LN04SS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・ハロゲンフリー対応。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    3ln04ss145mm200ma100ma+5it11716350maa1196it1171it11710 PDF