3LP04MH
Contextual Info: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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a1216 transistor
Abstract: a1216 marking xa
Contextual Info: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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mch6649ena1216pw10s900mm+4a1216-4/4a1216 transistora1216marking xa
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a12124
Abstract: 3lp04ch
Contextual Info: 3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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3lp04chena1212pw10s900mm20+2a1212-4/4a12124
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3lp04ss
Abstract: A12144
Contextual Info: 3LP04SS Ordering number : ENA1214 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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A1216
Abstract: MOS12
Contextual Info: MCH6649 注文コード No. N A 1 2 1 6 三洋半導体データシート N MCH6649 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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mch6649900mm2100ma--800ma+5pw10s--200mait11706a1216mos12
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a1217
Contextual Info: SCH2308 Ordering number : ENA1217 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2308 General-Purpose Switching Device Applications Features • • • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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transistor A1215
Abstract: a1215 transistors A1215 a1215 DIODE
Contextual Info: EC4309C Ordering number : ENA1215 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4309C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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ec4309cena1215pw10s145mm80mm1+5a1215-4/4transistor a1215a1215 transistorsa1215a1215 diode
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3LP04S
Abstract: A12134
Contextual Info: 3LP04S Ordering number : ENA1213 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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A1217
Abstract: A12172 IT11698 IT11702
Contextual Info: SCH2308 注文コード No. N A 1 2 1 7 三洋半導体データシート N SCH2308 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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sch2308900mm2100ma--800ma+7--200mapw10sit11706a1217a12172it11698it11702
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