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    IT11217 Search Results

    IT11217 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    82306

    Abstract: marking WZ 3HP04MH A0445
    Contextual Info: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    3hp04mhena0445900mm2a0445-4/4+382306marking wza0445 PDF

    A0639-3

    Abstract: SSFP package IT11215 A0639
    Contextual Info: 3HP04SS Ordering number : ENA0639 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    3hp04ssena0639145mm80mm1a0639-4/4+4a0639-3ssfp packageit11215a0639 PDF

    EC4305C

    Contextual Info: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C


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    ec4305cena0874a0874-4/4 PDF

    Contextual Info: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    sch2309ena0876900mm20a0876-4/4 PDF

    3HP04CH

    Contextual Info: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


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    3hp04chena0873900mm20a0873-4/4 PDF

    IT11215

    Contextual Info: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    sch2309900mm2100mait11217+4it12739--800ma--10vit11215 PDF

    Contextual Info: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


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    3hp04sena0877a0877-4/4 PDF

    IT11215

    Contextual Info: MCH6651 注文コード No. N A 0 8 7 5 三洋半導体データシート N MCH6651 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


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    mch6651900mm2100ma--200ma+4it11217it12738it12751it11215 PDF

    IT11215

    Contextual Info: MCH6651 Ordering number : ENA0875 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6651 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    mch6651ena0875900mm20a0875-4/4+1it11215 PDF

    Contextual Info: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS


    Original
    ena04453hp04mh900mm2a0445-4/4 PDF