IT01071 Search Results

2SC5551

Abstract: TA-2665
Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).

2SC5551

Contextual Info: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).

Contextual Info: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C

A11182

Abstract: 2sc5551a A1118-4/4
Contextual Info: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)

Contextual Info: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).

2SC5551

Abstract: 2038
Contextual Info: 注文コード No. N 6 3 2 8 2SC5551 No. N 6 3 2 8 N1299 新 2SC5551 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波中出力増幅用 ・高 fT である： fT=3.5GHz typ 。 ・大電流である：(IC=300mA)。 ・コレクタ損失が大きい：(1.3W max)。

Contextual Info: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)

2SC5551

Abstract: TA-2665 marking eb
Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).

A1118

Abstract: 7007B-004 2sc5551a 7400A
Contextual Info: 2SC5551A 注文コード No. N A 1 1 1 8 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5551A 高周波中出力増幅用 特長 ・高 fT である： fT=3.5GHz typ 。 ・大電流である： (IC=300mA)。