IT 144 Search Results

tda 3650

Abstract: C2907 40561 Commital TDA 335 TDA 15 570 tda 905 e2907hy2d
Contextual Info: &RQWDWWL PDVFKLR D SLQ]DUH 0DOH FULPS FRQWDFWV Codice Commital Commital P/N IT - 40579 IT - 40553 IT - 40553 - 12 IT - 40553 - 13 IT - 40553 - 15 IT - 40553 - 20 IT - 40553 - 26 IT - 40557 IT - 40557 - 08 IT - 40557 - 12 IT - 40557 - 13 IT - 40557 - 15 IT - 40557 - 20

G5012

Abstract: VG264260CJ-4 ICC1
Contextual Info: VIS ? VG264260CJ 262,144x16-B it CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

Contextual Info: VIS VG264260CJ 2 62,144x16-B it CMOS Dynamic RAM Preliminary D escription T he device is C M O S D ynam ic RAM organized as 262, 144-w ord x 16 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and advanced C M O S circu it design technologies. It is packaged in

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

Contextual Info: CS 45 Phase Control Thyristor VRRM = 800-1600 V IT RMS = 75 A IT(AV)M = 48 A VRSM VRRM TO-247 AD VDSM VDRM V V 900 1300 1700 800 1200 1600 Type A IT(RMS) IT(AV)M TVJ = TVJM TC = 75°C; 180° sine ITSM TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V it (di/dt)cr

Contextual Info: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a

fr9z

Abstract: VG264260
Contextual Info: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

Contextual Info: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a

X5470

Abstract: intel nehalem L5520 X5560 E5520 E5530 Intel Xeon 5500 E5355 intel 2.53GHz E5472
Contextual Info: Intel Xeon® Processor 5500 Series An Intelligent Approach to IT Challenges A Giant Leap for IT and Business Capabilities In many organizations, IT infrastructure has begun to constrain business efficiency and growth. For the past decade, IT has rapidly added low-cost hardware to accommodate business growth. But with data centers now stretched to capacity in

DS2223

Abstract: DS2223T DS2223Y DS2223Z DS2224 DS2224T DS2224Y DS2224Z DS22A
Contextual Info: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a

VG26426

Contextual Info: VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

it 101

Abstract: IT 144 IT101
Contextual Info: Type Turns R. Ue« V Up kV Vo • t V us t, Lp MS mH I—Sir UH Rp n Rs n ck Case Connec-Weight tions ca. g PF Ignition current 10 mA - 25 mA Rise tim et, at R L = 400 a IT 145 1:1 1:1:1 IT 143 IT 144 . 3:1:1 500 500 500 4 4 4 800 800 800 0,6 0,6 0,6 15 15

Contextual Info: MITSUBISHI LSIs M5M27C256AK-I 2 6 2 144 -B IT 3 27 68 -W O R D BY 8-B IT CMOS ER A SA B LE AND E LE C T R IC A LLY REPROGRAM MABLE ROM DESCRIPTION The M itsubishi M 5 M 2 7 C 2 5 6 A K -I is a high-speed 2 6 2 1 4 4 -b it ultraviolet erasable and electrically reprogram m able read

Contextual Info: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

Contextual Info: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

Contextual Info: SA SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 180 Volts 500 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN TEST STANDVOLTAGE VOLTAGE PART NUMBER CURRENT OFF VBR V VBR(V) IT (mA) VOLTAGE MIN.@IT MAX.@IT VRWM(V)

SA10

Abstract: SA10A SA11 SA11A SA12 SA12A SA13 SA13A SA14 SA14A
Contextual Info: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 500 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK

P6KE10

Abstract: P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15 P6KE15A
Contextual Info: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 400 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK

Contextual Info: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 220 Volts 3000 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN STANDTEST VOLTAGE VOLTAGE PART NUMBER OFF CURRENT VBR V VBR(V) VOLTAGE IT (mA) MIN.@IT MAX.@IT UNI-POLAR

P4KE10

Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A
Contextual Info: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 400 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK

3KP10

Abstract: 3KP10A 3KP11 3KP11A 3KP12 3KP12A 3KP13 3KP13A 3KP14 3KP14A
Contextual Info: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 3000 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK

1.5KE440CA

Abstract: 5KE12A 5KE15A 38000
Contextual Info: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 1500 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER JEDEC PART NUMBER REVERSE STAND-OFF VOLTAGE VTWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE

3KP10A

Abstract: 3KP10CA 3KP11A 3KP11CA 3KP12A 3KP12CA 3KP13A 3KP13CA 3KP14A 3KP14CA
Contextual Info: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 220 Volts 3000 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN STANDTEST VOLTAGE VOLTAGE PART NUMBER OFF CURRENT VBR V VBR(V) VOLTAGE IT (mA) MIN.@IT MAX.@IT UNI-POLAR