ISS MARKING Search Results

ARM1136J

Abstract: ARM1136J-S arm processor ARM processor based Circuit Diagram ARM1136 ARM1156T2F-S arm8 ARM10 ARM11 ARM1136JF-S
Contextual Info: RealView ARMulator ISS ® Version 1.4.3 User Guide Copyright 2002-2007 ARM Limited. All rights reserved. ARM DUI 0207D RealView ARMulator ISS User Guide Copyright © 2002-2007 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.

stc TUBE

Abstract: Arm610 ARM10 ARM11 ARM926EJ-S CP15 arm8 ARM925 ARM925T
Contextual Info: RealView ARMulator ISS ® Version 1.4 User Guide Copyright 2002-2004 ARM Limited. All rights reserved. ARM DUI 0207C RealView ARMulator ISS User Guide Copyright © 2002-2004 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.

smd diodes s4 1.5w

Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
Contextual Info: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2

outgoing material inspection format

Abstract: GL521 GP1UM101XP GP1UM10XP PD49PI M10XP
Contextual Info: ISS CUADD mm—ma OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR Infrared Detecting unit for Remote Control MODEL No. GP1UM10XP series V_ ;_ J Specified for

5SII

Abstract: 3H4 Photocoupler ED-96
Contextual Info: ED-96027 SPEC, No. SHARP ‘ Iss~;~* 27, 1996 PAGE’ ELECTROMC COMPONENTS GROUP SHARP CORPORATION ‘ “ 11 Page% ?$ ~~ ,-. REPRESENTATIVE DMSION OPTO-ELECTRONIC DEVICES DW. SPECIFICATION DEVICE SPECIFICATION FOR PHOTOCOUPLER MODEL No. PC3H4 Business dealing name : PC3H4

2SK546

Contextual Info: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

irf360lc

Abstract: ID 9302 IRFP360LC IRFPE30
Contextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω

Contextual Info: jmBTM jtttK tt ISS i l ln CCLM0035 THRU CCLMS750 DESCRIPTION: The CENTRAL SEM ICO NDUCTO R CCLM003S Series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are

irf460lc

Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

IRFPC60LC

Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

2SK546

Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

IRFP360LC

Abstract: IRFPE30
Contextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω

IRF350LC

Abstract: IRFP350LC IRFPE30
Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

Contextual Info: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω

Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

IRF450L

Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

IRF450LC

Abstract: IRFP450LC IRFPE30
Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

IRFPC50LC

Abstract: IRFPE30
Contextual Info: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω

CFPT-9000

Abstract: E5882LF rakon 10MHz
Contextual Info: Rakon Product Proposal CFPT9000 Specifications 1.0 SPECIFICATION REFERENCES Line Parameter Description 1.1 Description / Part Number 10MHz CFPT9000 Custom, -55 to 125°C / E5882LF, iss. C 2011-11-16 - PROVISIONAL 1.2 RoHS compliant Yes 1.3 Package size 7.0mm x 5.0 x 2.25 mm (see model drawing)

AX620

Abstract: gee transistor RAo sot-23 SC06960
Contextual Info: rz z s c s -m 0 M S0 N mrJM K O D raO H LIC TlO R lD ISS BFS19 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS19 F2 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . RF APPLICATION UP T 0 100 MHz

irf460lc

Abstract: IRFP460LC IRFPE30 irf46
Contextual Info: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω

mosfet 600V 16A

Abstract: IRFPC60LC IRFPE30
Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

Week 1233

Abstract: diode lt 247 marking code 11A IRFPC50LC IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated