ISS 99 DIODE DATASHEET Search Results

IRF7309

Abstract: AN-994
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2

IRF7306

Abstract: AN-994
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1241B IRF7306 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8

FL014

Abstract: FL014 Example EIA-541 IRFL014 IRFL4105
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.045 Ω ID = 3.7A

IRF9952

Abstract: IRF7319 IRF7309 IRF7509 Ultra Low Gate Charge
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1561 IRF9952 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated

AN-994

Abstract: IRF520N IRFR120 IRFR120N IRFU120N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1365 IRFR/U120N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.1A Description

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors

LSE B6 transformer

Abstract: IRFM260
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1388A IRFM260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Ω , HEXFET 200Volt, 0.060Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very

Contextual Info: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with

Contextual Info: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with

v810 diode

Abstract: TDA7541W LQFP64 TDA7541 TDA7541TR TDA7541WTR SL1014
Contextual Info: TDA7541 AM/FM car-radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7 MHz with image rejection – Mixer for 2nd IF 450 kHz – Internal 450 kHz band pass filter with

FDB2614

Contextual Info: FDB2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Contextual Info: FDP2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FDP2614

Contextual Info: FDP2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

IRFL014

Abstract: IRLL3303 21 SMD transformer
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1379A IRLL3303 PRELIMINARY HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance Description

FDP2614

Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

D2PAK

Contextual Info: FDB2614 tm N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features Description • RDS on = 22.9 mΩ ( Typ.) @ VGS = 10 V, ID = 31 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

AN4151

Abstract: Full-bridge LLC resonant converter AN-4151 LLC resonant converter transformer sectional bobbin LLC EER3542 core LLC resonant transformer FSFR2100 LLC resonant transformer LP Steigerwald A Comparison of Half Bridge Resonant
Contextual Info: www.fairchildsemi.com Application Note AN-4151 Half-bridge LLC Resonant Converter Design Using FSFR-series Fairchild Power Switch FPS Introduction The effort to obtain ever-increasing power density of switched-mode power supplies has been limited by the size

Fairchild Semiconductor DS-513

Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

v810 diode

Abstract: lg led tv electronic diagram Tv tuner Diagram LG RF circuit diagram of quality FM TRANSMITTER power ic of lg car stereo TDA7541W block diagram fm transmitter FM TRANSMITTER CIRCUIT DIAGRAM m0340 stereo preamplifier 16 pin ic
Contextual Info: TDA7541 AM/FM car radio tuner IC with stereo decoder and intelligent selectivity system Features • FM part – AGC generation by RF and IF detection – I/Q mixer for 1st IF 10.7MHz with image rejection – Mixer for 2nd IF 450kHz – Internal 450kHz band pass filter with

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

SSH6N90A

Abstract: SSH6N90
Contextual Info: SSH6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V

SSF6N90A

Contextual Info: SSF6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V