ISS 184 DIODE Search Results

d1505

Contextual Info: SIEMENS BAR 64. Silicon PIN Diode • • • High voltage current controlled R F resistor for R F attenuator and swirches Freqency range above 1 MHz • • Low resistance and short carrier lifetime For frequencies up to 3 G H z Type BAR B AR B AR BAR 64

Contextual Info: SIEMENS BSM 25 GB 120 D BSM 25 GAL 120 D IGBT Module Prelim inary D ata VCE = 1200 V / c = 2 x 35 A at r c = 25 C / c = 2 x 25 A at Tc = 80 *C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate

Contextual Info: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

mosfet irfp 250 N

Abstract: IRFP 260 M w46a Irfp260 transistor irfp
Contextual Info: Standard Power MOSFET IRFP 260 VDSS ID cont RDS(on) = 200 V = 46 A Ω = 55 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

ISS 184 diode

Abstract: sml40m42bfn
Contextual Info: SEPIELAB PLC_ bOE D • 5133157 DOOOflöD flbT M S f l L B _ 4 MOS POWER = ^ = 'T "'3ci«'L'7 SEME LAB SML40M42BFN SML35M42BFN 400V 95.0A 0.042Q 350V 95.0A 0.0420 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

smd code 46n

Abstract: SPB46N03L smd diode 46A 46n03l
Contextual Info: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q

TO-264AA

Abstract: APT10050LVR
Contextual Info: APT10050LVR A DVAN CED P ow er Te c h n o lo g y 1000V 21A 0.500Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing der >ity and reduces the on-resistance. Power MOS V™

NTC 4,7

Abstract: ntc 4.7 NTC Inrush Current Limiters Thermistor ntc 2.5 ohm Thermistor cross reference IEC 68-2-6 NTC 2.5 UA 741 datasheet NTC 4,7 S M i2 200-5
Contextual Info: NTC Thermistors Inrush current limiters Contents NTC General Characteristics p. 2 NTC as inrush current limiter p. 4 How to order p. 5 Technical data p. 6 Taping characteristics p. 14 Packaging p. 16 Manufacturing process and quality assurance p. 18 Reliability

Contextual Info: Type BSC097N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested VDS 60 9.7 RDS on ,max • Superior thermal resistance • N-channel 1) • Qualified according to JEDEC for target applications

max1851

Abstract: LF400 MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX185 Diode N4148 MX584
Contextual Info: 19-3127; Rev.O; 4/91 High~Speed 12-B it A/D Converters W ith E x te rn al R eference Input _ Features ♦ 12-Bit Resolution and Accuracy ♦ Fast Conversion Times: MAX183-3tis MAX184 - 5lis MAX185 -10ÌLS ♦ Low 90mW Power Consumption

LF400

Contextual Info: yi/iyjxiyi/i 19-3127; Rev.O; 4/91 High-Speed 12-Bit A/D Converters With External Reference Input _ Features ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current

ZXMN3B04N8

Abstract: ZXMN3B04N8TA ZXMN3B04N8TC 3b04
Contextual Info: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

SOT457 N-Channel FD

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH107 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V

LF400

Contextual Info: 19-3127, Rev.O; 4/91 J V \J V X \J V \ H igh-S peed 12-B it A/D C o nverters W ith E x te rn a l R e fe re n c e In p u t _ F eatures ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current

0030456

Abstract: 100-P BUK436-60A BUK436-60B
Contextual Info: N AUER P H I L I P S / D I S C R E T E J> b^E • bbSBTai 0D3D455 Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK437-500B

Abstract: J812 DD304 HIA TRANSISTOR
Contextual Info: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ADG1608

Abstract: D0831 ADG1608BCPZ-REEL71 ADG1608BCPZ-REEL7
Contextual Info: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FEATURES FUNCTIONAL BLOCK DIAGRAMS 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation

Contextual Info: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FUNCTIONAL BLOCK DIAGRAMS FEATURES 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation

025Q

Abstract: MS-012AA ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC LD86A ls32a
Contextual Info: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V B R D SS =30V : RDS(O n)=0.025Q; lD=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge

Contextual Info: Technical D a ta _ CD54/74AC257, CD54/74AC258 CD54/74ACT257, CD54/74ACT258 257 258 Quad 2-Input Multiplexer with 3-State Outputs C D54/74AC/ACT 257 C D54/74AC/ ACT 258 92 CS - 4 2S 6 2 FUNCTIONAL DIAGRAM Advance Information Non-Inverting Outputs

Contextual Info: AH292 LOW VOLTAGE HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Frequency Generator FG Output Built-in Zener Protection for Output Driver Operating Voltage: 1.8V~5.75 V