ISM MOSFET Search Results

WCs MARKING

Abstract: ETC1-1-13 PE4128
Contextual Info: ADVANCE INFORMATION PE4128 High Linearity Quad MOSFET Mixer for WCS and 2.4 GHz ISM Band Applications Product Description The PE4128 is a high linearity, passive Quad MOSFET Mixer for WCS and 2.4 GHz ISM applications exhibiting high dynamic range performance over an LO drive range

M27500-16RC1509

Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

G2225X7R225KT3AB

Abstract: m27500 transfer impedance
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

Contextual Info: Ordering number: ENN7012 N-Channel Silicon MOSFET MCH6405 ISMÊYOl Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 2193A Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENN6672~] N-Channel Silicon MOSFET 2SK3449 ISM lYO i DC / DC Converter Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2190 [2SK3449] 3.3, 0,7 1 : Source 2 : Drain 3 : Gate

Contextual Info: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1

Transistor S 40442

Abstract: 78570 IRF27 F 78570 74605
Contextual Info: VFT150-50DE RF MOSFET POWER TRANSISTOR PACKAGE STYLE .65 X .580 PLASTIC IRF275 DESCRIPTION: The VFT150-50DE is a broad band RF MOSFET packaged in a low cost high power plastic package. It is ideal for ISM, HF & VHF Communications, & FM Broadcast. FEATURES:

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

arco 406

Contextual Info: ARF521 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.

VRF150

Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

garage door 300mhz transmitter circuits diagram

Abstract: XE1231 circuit diagram door opener 433mhz rx tx SX1212 SX1282 RF REMOTE CONTROLLER circuit diagram of wireless door sensor 433Mhz PIC16F631 SX1231 tx 434 ask cr2032
Contextual Info: RF Overview September 2010 Semtech ISM Band Products Agenda -Introduction -Roadmap Update -Applications -Tools -Q&A Design & Application Center and Sales Office Sales & Support Office Semtech Confidential 2 Introduction : Worldwide infrastructure of design, applications, support

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

VRF151

Abstract: vertical mosfet RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

arco 406

Abstract: arco mica trimmer ARF521 arco 2.22 pf trimmer 80 watt hf mosfet arco 465 ATC 1nF 700B C11-C13
Contextual Info: ARF521 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified 125 Volt, 81MHz Characteristics:

ARF521

Abstract: arco mica trimmer arco 406 700B C11-C13 VK200-4B mica trimmer
Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

Contextual Info: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

NEC protocol

Abstract: NEC Infrared protocol application note philips RC5 protocol RC5 IR NEC IR protocol NEC IR philips RC5 rc5 protocol RC5 command reference HCS08/rc5 protocol
Contextual Info: Freescale Semiconductor Application Note Document Number: AN4152 Rev. 0.0 , 06/2010 Recommendations for Implementing an IR Blaster on MC1321x and MC9S08QE128 Based IEEE 802.15.4 Wireless Nodes 1 Introduction The availability of low-cost 2.4 GHz ISM band IEEE

arco 406

Abstract: arco mica trimmer ARF520 700B C11-C13 VK200-4B mosfet class ab rf mica trimmer
Contextual Info: ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics:

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics: