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    ISD 2210 Search Results

    ISD 2210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB62210FNG
    Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1/Phase Interface Datasheet
    71922-210LF
    Amphenol Communications Solutions Quickie® Eject Latch connector, 2.54mm(0.100in), Shrouded Header, Through Hole, Right Angle, Double Row, 10 Positions PDF
    20021221-00006T8LF
    Amphenol Communications Solutions Minitek127®, Wire to Board connector, Shrouded vertical header, Surface Mount, Double Row, 6 Positions, 1.27mm (0.500in) Pitch. PDF
    20021221-000A0T1LF
    Amphenol Communications Solutions Minitek127®, Wire to Board connector, Shrouded vertical header, Surface Mount, Double Row, 100 Positions, 1.27mm (0.500in) Pitch. PDF
    10131319-1022100LF
    Amphenol Communications Solutions Minitek® Pwr 4.2 HCC, Dual Row, Vertical Through Hole Header, 100u\\ Matte Tin overall plating, Black Color, 10 Positions, Non GW Compatible Nylon66, Tray Packing. PDF

    ISD 2210 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISD 2210

    Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan
    zvn2210bzvn2210lstability39o-220+1isd 2210 PDF

    ZVP 210

    Abstract: ZVP2210B zetex zvp ZVP P-channel
    Contextual Info: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    zvp2210bzvp2210lo-220zvp 210+2zetex zvpzvp p-channel PDF

    6790

    Abstract: MOSFET 50V 100A IRFPS3810PBF
    Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†


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    irfps3810pbfsuper-247tm6790mosfet 50v 100a PDF

    IRFB16N50KPBF

    Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free l l l l l VDSS RDS(on) typ. 285m: 500V ID 17A


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    irfb16n50kpbfo-220ab PDF

    IRFPS3810

    Contextual Info: PD - 93912A IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description


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    3912airfps3810super-247tm5m-1994+1o-274aa PDF

    Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†


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    irfps3810pbfsuper-247rati789 PDF

    22mH 400v inductor

    Abstract: IRFB16N50K TO-220aB DIODE 11A
    Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive


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    5855airfb16n50ko-220ab22mh 400v inductor+1to-220ab diode 11a PDF

    Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†


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    irfps3810pbfsuper-247 PDF

    6790

    Abstract: TO274 IRFPS3810 TO-274
    Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description


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    93912birfps3810super-247tm5m-1994+4o-274aa6790to274to-274 PDF

    Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description


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    93912birfps3810super-2475m-1994+1o-274aa PDF

    IRFB16N50K

    Contextual Info: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive


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    irfb16n50ko-220ab PDF

    IRFB16N50K

    Abstract: SiHFB16N50K SiHFB16N50K-E3
    Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


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    irfb16n50ksihfb16n50ko-22018-jul-08+1sihfb16n50k-e3 PDF

    IRFB16N50K

    Abstract: SiHFB16N50K SiHFB16N50K-E3
    Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


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    irfb16n50ksihfb16n50ko-22018-jul-08+1sihfb16n50k-e3 PDF

    Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


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    irfb16n50ksihfb16n50ko-220irfb16n50kpbf+3sihfb16n50k-e3irfb16nmerchantability12-mar-07 PDF

    Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A


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    irfb16n50kpbfo-220ab08-mar-07 PDF

    Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive


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    5855airfb16n50ko-220ab08-mar-07 PDF

    Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A


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    irfb16n50kpbfo-220ab12-mar-07 PDF

    Contextual Info: PD - 94436A IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ


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    4436airf2804o-220abirf1010 PDF

    IRF2804

    Abstract: MOSFET driver 175C
    Contextual Info: PD - 94436B IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ


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    94436birf2804o-220abmosfet driver 175c PDF

    Contextual Info: PD - 94495A IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,


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    4495airf2804sirf2804lvariet90+1eia-418 PDF

    STL30NF3LL

    Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE


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    stl30nf3ll PDF

    STL30NF3LL

    Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE


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    stl30nf3ll PDF

    stl30nf3ll

    Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.006Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA TYPE VDSS R DS on ID STL30NF3LL 30 V < 0.008 Ω 30 A • ■ ■ TYPICAL RDS(on) = 0.006Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE


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    stl30nf3ll PDF

    IRF2804L

    Abstract: IRF2804S
    Contextual Info: PD - 94495B IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,


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    94495birf2804sirf2804leia-418 PDF