ISD 2055 Search Results

13N50

Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

13N50

Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can

Diode S4 55a

Abstract: 11n50 ISD 2055 11N-50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

TO-220 DIODE 11A

Abstract: VDS-500V 11n50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

11N50

Abstract: 11N-50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

11N-50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

Contextual Info: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: KSM11N50CF/KSMF11N50CF 500V N-Channel MOSFET TO-220 TO-220F Features • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)

Contextual Info: KSM13N50C/KSMF13N50C 500V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 13A, 500V, RDS on = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

IRHF53Z30

Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

24v 12v 10A regulator

Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

Contextual Info: PD - 93793C IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω

Contextual Info: PD - 93793E IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY ™ Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω

IRHF53Z30

Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

FDB44N25

Abstract: n-channel 250V power mosfet FDB44N25TM
Contextual Info: UniFET TM FDB44N25 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC)

FQA13N50C

Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQA13N50C

Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

STK621-051

Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
Contextual Info: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology

FQA13N50CF

Contextual Info: TM FQA13N50CF 500V N-Channel MOSFET Features Description • 15A, 500V, RDS on = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 43 nC)

FQB13N50C

Abstract: FQI13N50C 13A500V
Contextual Info: TM FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF13N50C

Abstract: FQP13N50C FQPF Series
Contextual Info: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF13N50C

Abstract: FQP13N50C FQPF Series
Contextual Info: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to