ISD 1820 P Search Results

ISD 1820

Abstract: ISD 1820 P MJQ-XXX-40 S 2153 d 56L22 T5620 T5650 T5675 T5681 T5683
Contextual Info: IC - Transformer Selection Guide for T1/E1/C EPT/ISD N -PR I Quad Ports IC Part N umber R eceive 1:2C T 1:2CT MJQ-006-40 C S 61535A , C S 61574A , C S 61575, C S 6158A T1 1:1.15 1:2CT MJQ-002-40 C S 61535A , C S 61574A , C S 61575, C S 6158A E1 1:2C T 1:2CT

ISD 1820

Abstract: OMS420 OMS420A OMS520 OMS620
Contextual Info: OMS420 OMS520 OMS620 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 200 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration

ISD 1820

Abstract: OMS410 OMS410A OMS510 OMS520 shunt resistor current motor
Contextual Info: OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration

Contextual Info: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ

ISD 1820

Abstract: power mosfet 600v 29a ISD 1820 P IRFPS37N50A
Contextual Info: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ

SiHFPS29N60L

Abstract: ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3
Contextual Info: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration

AN-1005

Abstract: ISD 1820 P
Contextual Info: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF IRLU3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ

IRLR3110ZPBF

Abstract: U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110
Contextual Info: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF IRLU3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ

Contextual Info: PRECISION TEMPERATURE CALIBRATOR WITH PRESSURE OPTION MODEL CLB CLB 3590 $ Model Shown Temperature Calibrator CLB $3590 Shown with optional CLB-PM-602-602 Pressure module ($1595) ߜ Calibration Lab in a Nutshell ߜ Rotatable Control Panel ߜ Reads Input and

Contextual Info: AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description VDSS

1D225

Abstract: 200 Amp bridge mosfet ptc resistor 300 to 500 e OMS420 OMS420A OMS520 OMS620 L15A diode t25 4 HO
Contextual Info: OMS420 OMS52Q OMS620 3 PHASE, LOW VOLTAGE, LOW R Ds<on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 200 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration

76633S

Abstract: 76633P 76633-s AN9321 Intersil 1820
Contextual Info: in te rd i HUF76633P3, HUF76633S3S D a ta S h e e t O c to b e r 1 9 9 9 F ile N u m b e r 4 6 9 3 .3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.035Q, Vqs = 10V

76633s

Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S

4.00d

Abstract: ptc resistor 300 to 500 e OMS410 OMS410A OMS510 QMS410 QMS510
Contextual Info: OMS410 OMS410A QMS510 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration

76633S

Abstract: 76633P HUF76633P3 HUF76633S3S HUF76633S3ST TB334
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 33P Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE UF76 3S3 bjec 8A, 0V, 36 m, JEDEC TO-263AB GATE

mosfet

Abstract: EIA-541 IRLMS4502 IRLMS6702
Contextual Info: PD- 93759B IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier

6x marking sot-23 p-channel

Abstract: IRLMS4502 IRLMS6702
Contextual Info: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

76633P

Abstract: 993E4 2040e 76633 741E
Contextual Info: HUF76633P3_F085 Data Sheet April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V SOURCE DRAIN GATE • Simulation Models

AN1001

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD - 95287 IRF7492PbF HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: CSD19536KCS www.ti.com SLPS485 – JANUARY 2014 CSD19536KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19536KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating

Contextual Info: CSD19536KCS www.ti.com SLPS485 – JANUARY 2014 CSD19536KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19536KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating

ISD 1820 P

Abstract: IRF7492 AN1001 IC 22A Regulator
Contextual Info: PD - 94498 IRF7492 HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

irlms4502

Contextual Info: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD19536KCS SLPS485A – JANUARY 2014 – REVISED APRIL 2014 CSD19536KCS 100 V N-Channel NexFET Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd