ISD 1740 Search Results

4800b

Abstract: max 4800b qv606m1 QV306m1 QV600 MAX232 PIC16F627A quadravox QV606 quadravox QV606 type 2 4800B DATA
Contextual Info: _ QV600 Quadravox QV606m1 type 1 - RS232 controlled sound playback module QV306m1 emulation The QV606m1 MP3-based digital message module with type 1 firmware is intended to replace the QV306m1 Winbond ISD ChipCorder based system. It therefore duplicates the size, pinout, and

0409 06 027 053

Abstract: P12NK60Z F12NK60Z isd 1740 59 L2 zener P12NK60 STP12N JESD97 STF12NK60Z STP12NK60Z
Contextual Info: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A 150 W 35 W • ■

P12NK60

Abstract: F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z
Contextual Info: STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A ID PW 35 W 3 3 • Extremely high dv/dt capability

P12NK60

Contextual Info: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability

Contextual Info: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability

IRFP4368PBF

Abstract: AN-994
Contextual Info: PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)

Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

Contextual Info: PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max. ID (Silicon Limited)

w12nk60z

Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

400N4F6

Contextual Info: STI400N4F6, STP400N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Features Order codes STI400N4F6 STP400N4F6 VDSS RDS on max ID TAB TAB 40 V < 1.7 mΩ 120 A(1) 1. Limited by package

AM-145

Abstract: STH400N4F6-2 STH400
Contextual Info: STH400N4F6-2, STH400N4F6-6 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − preliminary data Features Order code STH400N4F6-2 STH400N4F6-6 VDSS RDS on max ID 40 V < 1.15 mΩ 180 A(1) TAB TAB 2

IRF9358

Abstract: P-channel power mosfet SO-8 30V 9.2A 20 MS-012AA IRF9358PBF IRF9358TRPBF
Contextual Info: PD - 97616 IRF9358PbF HEXFET Power MOSFET VDS -30 RDS on max V 16.3 mΩ 23.8 mΩ Qg (typical) 19 nC ID -9.2 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 D G2 2 S1 3 G1 4 8 D2 7 D2 D 6 D1 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

IRF9358

Contextual Info: PD - 97616 IRF9358PbF HEXFET Power MOSFET VDS -30 RDS on max V 16.3 mΩ 23.8 mΩ Qg (typical) 19 nC ID -9.2 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 D G2 2 S1 3 G1 4 8 D2 7 D2 D 6 D1 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

ao8807

Abstract: 70°C AO8807L PF334
Contextual Info: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807

AON4407

Abstract: RL067
Contextual Info: AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. VDS (V) = -12V

Contextual Info: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807

ao4821

Abstract: 70°C RL067 M3025
Contextual Info: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.

AO8807L

Contextual Info: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.

Contextual Info: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.

Contextual Info: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

irf 1740

Abstract: 48V SMPS smps 48v 12v
Contextual Info: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description

IRF7478PBF

Abstract: 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v
Contextual Info: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V

irf 1740

Abstract: EIA-541 P Channel Power MOSFET IRF
Contextual Info: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's are a 150°C