IS61WV Search Results

IS61WV51232BLL-10BLI

Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
Contextual Info: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater

IS61WV3216BLL

Abstract: IS64WV3216BLL
Contextual Info: IS64WV3216BLL IS61WV3216BLL ISSI 32K x 16 HIGH-SPEED CMOS STATIC RAM NOVEMBER 2005 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW typical operating 25 µW (typical) standby • TTL compatible interface levels

IS61WV25616BLL-10TLI

Abstract: IS61WV25616ALL IS64WV25616 IS61WV25616BLL IS61WV25616BLL-10TI IS64WV25616BLL-10CTLA3 is61wv25616bll-10bli IS61WV25616BLL-10TL IS61WV25616
Contextual Info: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical)

IS61WV51216

Abstract: IS61WV51216BLL IS61WV51216BLL-10TLI is64wv51216bll-10ctla3 IS64WV51216BLL-10MLA3 IS61WV51216BLL-10TI IS64WV51216BLL IS61WV51216BLL-10MLI IS61WV51216ALL IS61WV5121
Contextual Info: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater

IS61WV10248BLL

Abstract: IS61WV10248BLL-10TLI IS61WV10248BLL-10TI IS61WV10248BLL-10MLI IS61WV10248BLL-10T
Contextual Info: IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2008 FEATURES DESCRIPTION • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

IS61WV10248EDBLL

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

IS61WV5128EDBLL

Abstract: is61wv5128
Contextual Info: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

is61wv5128

Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM JULY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

IS61WV6416EEBLL

Abstract: IS64WV6416EEBLL-10BA3
Contextual Info: IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The ISSI IS61/64WV6416EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

is61wv5128

Abstract: IS61WV5128BLL-10TLI
Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MAY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

IS61WV25616ALL

Abstract: IS61WV25616 IS61WV25616BLL-10TLI IS61WV25616BL IS64WV25616
Contextual Info: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical)

IS61WV10248EDBLL-10TLI

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

Contextual Info: IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

Contextual Info: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM NOVEMBER 2012 FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL •฀ High-speed฀access฀time:฀8,฀10,฀20฀ns •฀ Low฀Active฀Power:฀85฀mW฀(typical)

Contextual Info: IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The฀ ISSI฀ IS61/64WV6416EEBLL฀ is฀ a฀ ฀ high-speed,฀ FEATURES •฀ High-speed฀access฀time:฀8,฀10฀ns •฀ Low฀Active฀Power:฀85฀mW฀ typical

IS61WV25616EDBLL

Abstract: IS61WV25616EDBLL-10TLI
Contextual Info: IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns)

IS61WV20488BLL-10MLI

Abstract: IS61WV20488ALL IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10TI IS64WV20488BLL b0804 IS61WV20488BLL10T
Contextual Info: IS61WV20488ALL IS61/64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

IS61WV1288EEBLL

Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

IS64WV51216BLL-10MLA3

Abstract: IS61WV51216 IS61WV51216BLL IS64WV51216BLL
Contextual Info: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater

IS61WV20488ALL

Abstract: IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10MLI IS61WV20488BLL-10TI IS64WV20488BLL
Contextual Info: IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ISSI 2M x 8 HIGH-SPEED CMOS STATIC RAM AUGUST 2006 FEATURES DESCRIPTION • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

Contextual Info: IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

512kx4

Contextual Info: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC PRELIMINARY INFORMATION AUGUST 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical

Contextual Info: IS64WV6416BLL IS61WV6416BLL ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW typical operating 25 µW (typical) standby • TTL compatible interface levels

Contextual Info: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater