IS2 Search Results

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

X101

Abstract: X110
Contextual Info: IS25C32B 32K-BIT SPI SERIAL CMOS EEPROM FEATURES • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Wide Voltage Operation — Vcc = 1.8V to 5.5V • Low power CMOS — Active current less than 1 mA (1.8V) — Standby current less than 1 µA (1.8V)

ic power 22E

Abstract: power 22E IC 12E MARKING
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

2SC3609

Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e |2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC

IS24C16A-2ZLI

Abstract: IS24C02A-2SLI IS24C02A IS24C04A IS24C08A IS24C16A IS24C04A2GLI IS24C02A-2GLI IS24C04A-2GLI
Contextual Info: IS24C02A IS24C04A IS24C08A IS24C16A ISSI 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM MARCH 2005 FEATURES DESCRIPTION • Two-Wire Serial Interface, I2CTM Compatible –Bi-directional data transfer protocol • 400 KHz 2.5V and 1 MHz (5.0V) Compatible

IS24C64B

Abstract: 24C16 IS24C32A IS24C64A
Contextual Info: IS24C32A IS24C64A/B ISSI 65,536 bit/32,768 bit 2-WIRE SERIAL CMOS EEPROM ADVANCED INFORMATION JANUARY 2004 FEATURES DESCRIPTION • Two-Wire Serial Interface –Bi-directional data transfer protocol • 400 KHz I2C Protocol Compatibility • Low Power CMOS Technology

Contextual Info: IS24C02-3 m 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM i PRELIMINARY SEPTEMBER 1998 FEATURES • Low power CMOS Self-timed write cycle — Active current less than 2 mA — Maximum write cycle time of 10 ms — Standby current less than 8 fiA Endurance: 100,000 cycles per byte

Contextual Info: m IS27HC256 32,768 X 8 HIGH-SPEED CMOS EPROM i NOVEMBER 1997 FEATURES DESCRIPTION • Fast read access time: 45 ns The I S S I IS27HC256 is a ultra-high-speed 256K-bit CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally compatible with the

Contextual Info: ISSI IS24C01_ 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM ADVANCE INFORMATION APRIL 1998 FEATURES OVERVIEW • Low power CMOS — Active current less than 2 mA — Standby current less than 8 fiA • Hardware write protection — Write control pin

Contextual Info: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

Contextual Info: ESI IS27HC010 131,072 x 8 HIGH-SPEED CMOS EPROM FEATURES • Fast read access time: 30 ns • Pin compatible with the IS27C010 • High-speed write programming — Typically less than 30 seconds • Industrial and commercial temperature ranges available • ±10% power supply tolerance

Contextual Info: ¡SSI IS22C011 8 to 12 SEC INSTANT VOICE ROM SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

Contextual Info: ISSI IS 2 7 H C 0 1 0 131,072 X 8 HIGH-SPEED CMOS EPROM FEATURES • Fast read access time: 30 ns • Pin compatible with the IS27C010 • High-speed write programming — Typically less than 30 seconds • Industrial and commercial temperature ranges available

Contextual Info: IS23SC4418 7C O P IS23SC4428_ l u u l 1-KBYTE EEPROM A D V A N C E IN F O R M A T IO N WITH WRITE PROTECT FUNCTION AND F e b r u a r y 1999 PROGRAMMABLE SECURITY CODE PSC FEATURES DESCRIPTION • Standard CMOS process IS23SC4418 • 1024 x 8 bits EEPROM organization

Contextual Info: m IS27DV256 32,768 X 8 DUAL VOLTAGE CMOS EPROM i ADVANCE INFORMATION FEBRUARY 1998 FEATURES DESCRIPTION • Dual voltage range operation: 3.0 to 3.6V or 5 V ± 10% The lS S I IS27DV256 is a dual voltage, low power, high-speed 256K-bit CMOS 32K-word by 8-bit CMOS Programmable

Contextual Info: ISSI IS24C02_ 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM JANUARY 1998 FEATURES Endurance: 1, 000,000 cycles per byte 8-pin PDIP or SO IC packages Filtered inputs for noise suppression Low pow er CMOS — Active current less than 2 mA — Standby current less than 8 fiA

1s22 vacuum tube switch

Abstract: 1S22 Scans-0017350
Contextual Info: TENTATIVE DATA IS22 - T U M 8 S 0 L - \ VACUUM SW IT C H THE 1 S 2 2 I S A S IN G L E P O L E , DOUBLE THROW, HIGH VACUUM S W ITC H . THE SW ITCH I S A C TU A TED M E C H A N IC A L L Y B Y MEANS OF A L E V E R ARM EXTEN DIN G THROUGH A

Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 fiA maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: ISSI IS22C120 16 to 20 SEC VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 16 seconds - 6 KHz sampling is 20 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

Contextual Info: m IS24C04-3 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM ¡ PRELIMINARY JULY 1997 FEATURES Endurance: 100,000 cycles per byte 8-pin PDIP or SOIC packages Filtered inputs for noise suppression • Low power CMOS — Active current less than 2 mA — Standby current less than 8 fiA

IS25c010

Abstract: IS25C01 X101 X110
Contextual Info: ISSI IS25C01 1,024-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information February 2004 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)