IS 208 Search Results

HSM198S

Abstract: DSA003636
Contextual Info: HSM198S Silicon Schottky Barrier Diode for Various Detector ADE-208-090C Z Rev. 3 Oct. 2001 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Hitachi DSA002712

Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Preliminary Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching HITACHI ADE-208-090B Z Preliminary Rev. 2 Jun. 1993 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.

hitachi rectifier

Abstract: HSM198S SC-59A Hitachi DSA0044
Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Contextual Info: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA00164

Contextual Info: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA002789

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA002748

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev 5 July 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276S

Abstract: SC-59A DSA003635
Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev. 5 Jul. 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276SR

Abstract: SC-59A DSA003635
Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSB276S

Abstract: DSA003643
Contextual Info: HSB276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-780 Z Rev. 0 Mar. 1999 Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

HITACHI DIODE

Abstract: HSB276AS DSA003644
Contextual Info: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-838 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-039E Z Rev 5 July 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

10 gb laser diode

Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Contextual Info: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HD74ALVC16334

Abstract: Hitachi DSA00115
Contextual Info: HD74ALVC16334 16-bit Universal Bus Driver with 3-state Outputs ADE-205-208 Z Preliminary 1st. Edition December 1997 Description This HD74ALVC16334 is a 16-bit universal bus driver is designed for 2.3 V to 3.6 V VCC operation. Data flow from A to Y is controlled by the output enable (2() input. The device operates in the

Contextual Info: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63|im band AlGalnp laser diode with multi quantumwell (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in barcode readers, laser

HL6740FG

Abstract: 208024
Contextual Info: HL6740FG ODE-208-024 Z Rev.0 Feb. 24, 2006 Dual Beam Visible Laser Diode Description The HL6740FG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is an array of two individual beams on one chip. Therefore, it is suitable as a light source for a high-speed printer, such as PPC and

Contextual Info: HD74ALVC16334 16-bit Universal Bus Driver with 3-state Outputs HITACHI ADE-205-208 Z Preliminary 1st. Edition December 1997 Description This HD74ALVC16334 is a 16-bit universal bus driver is designed for 2.3 V to 3.6 V V cc operation. Data flow from A to Y is controlled by the output enable (OE) input. The device operates in the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE/BE 10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard

Hitachi DSA002742

Contextual Info: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63µm band AlGaInp laser diode with multi quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in bar code readers, laser

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-5E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 • DESCRIPTION The MBM29LV016T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each. The MBM29LV016T/B is offered in a 40-pin TSOP packages. The device is designed to be programmed in-system

diode MARKING CODE A9

Abstract: MBM29F004BC MBM29F004TC SA10 FPT-32P-M24 SA1016K
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed