IRTE Search Results

Contextual Info: sam tec I* Features: •* Direct irterfa ce with PC carc End snrooi ■ Accepts 0,79mm .031” or (1,57mm) .062” csrds - (1 2 7 m n ) .050" pitch * 50 to 15:0 contacts • Available Fail 1998 Side shroud id,79m m ) , 0 3 ) * or 1 ’” ' ? 71 card APPLICATIO N SPEC IFIC INTERFACES

6b8g

Abstract: Tube 6B7
Contextual Info: 2B7, 6B8 g S B ? TUHG-SOL D U O -D IO D E PENTODE A M P L I F I E R COATED UN I PO TENTIAL CATHODE 2B7 - 2 . 5 VOLTS 0 . 8 AMPERE 6B7 - 6 . 3 VOLTS 0 . 3 AMPERE 6B86 - 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC G L A S S BU LB 2 B 7 , 6B 7 SMALL 6B8G METAL SK IRTED

mark AT0

Abstract: ERA15 T151 T810 AT-05 general purpose diode marking code -06 general purpose diode marking code -08
Contextual Info: ERA15 1 .OA Outline Drawings GENERAL USE RECTIFIER DIODE * Features • f c / J '8 M c fc *> , 5 m e 7 f m 3 T O Ultra small package, possible for 5mm pitch automatic IS iT F • Marking insertion. • Sif&IRte High reliability A 7 - 3- K : Ö Color code : White

Contextual Info: 50 V d c, 603 S eries -irTELEDYNE RELAYS CHARACTERISTIC CURVES 20 30 40 50 20 60 60 LOAD CURRENT VS TEMPERATURE 603-2 FIGURE 1 FIGURE 2 0.60 I CONTROL VOLTAGE (Vdc) SURG E DURATION (ms) - NON-REPETITIVE INPUT CURRENT VS CONTROL VOLTAGE MAXIMUM SURG E A S FUNCTION O F LOAD VOLTAGE

9761ARS

Abstract: d976
Contextual Info: ANALOG DEVICES dial 10-Bt TxDac * with2x Irterpdation Rlters Æ0761 FEATURES Com plete 10-Bit, 40 MSPS Dual Transmit DAC Excellent Gain and Offset Matching Differential N onlinearity Error: 0.5 LSB Signal-to-Noise and Distortion Ratio: 58 dB Spurious-Free Dynamic Range: -6 5 dB

ps3000

Contextual Info: 1500 WATTRM SERIES FRONT ENDS FEATURES Like the rest of the RM Series I for t Encs these W ide ac in p u t range 1500 watt supplies are designed ,o support high-availability applications suet, as mission- P ow er fa c to r corre cte d critical computing. An optional irterna' ORing

Contextual Info: SOLI» STATE DEVICES INC flBbbon oooas^D t. 3SE J> Rectifiers Continued Solid State Devices, Irte. 14849 Firestone Boulevard • La Mirada, CA 90638 f Phone (213)921-9660 • Fax (714)522-7424 1 25°C Electrical Characteristics mm ISSI Package Style - -• “-3 Square T;ib D

RADIOTRON

Abstract: rca company Rectifier Tubes "Rectifier Tube" RCA tube
Contextual Info: HALF-WAVE HIGH-VACUUM RECTIFIER FOR U S E W ITH CATHO PE-RAY T U B E S _ Tungsten 2.5 5.0 Fi 1ament Vo I tage Current a-c v o lt s amp. 7* to 7-5/8" 1-13/16" T-H Medium Metal S k irte d Med i urn 4-Pi n O v e ra l1 Length Maximum Diameter Bui b

A37 diode

Abstract: ERA15 diode a37 marking code ca MARKING CODE A37 general purpose diode marking code -06 37A37
Contextual Info: E R A 1 5 i .oa M JE N 'ii : Outline Drawings G EN ER A L U SE R E C T IF IE R DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • Sf&IRte High reliability A 7 -3 —K : Ö

Contextual Info: In-8sr1sa Adaptors • 1&0 QHz ‘£! 8780-Q0BMI ntaft M M M M ML Arnold p l^ otonpi tto Piit Nunbar autHfrem • o tto -o a tat Numb* 3WMWMI r H r M M d a H _ _ _ _ _L _n r. gdd ^iefc change die m i N irter n ib ten 201

Contextual Info: irteT P K IU M N IM V 82596CA STATION DIAGNOSTICS AND SELF-TEST The 8 2 5 9 6 provides a large set of diagnostic and network m anagem ent functions. Th ese include inter­ nal and external loopback and time domain reflectometry for locating fault points in the network cable.

full subtractor circuit using decoder and nand ga

Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
Contextual Info: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array

Contextual Info: |dy Irtegiated. Dev xe TechnoJogy, lie . CMOS Triple Bus SyncFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1 , 02 4 x3 6 x 2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: There are two errata notices at the end of this data sheet. The corrections have already been incorporated

Contextual Info: d r a w in g m ade : in A m e r ic a n .+•1973 BY A M p W S PRO DUCTS C O V irtE D 3*4- 4P-' « • - r r.%-r.4r i « ja r ri . * ^ £ rf* 1 ZONE LTR OESCplPTKOM _. . % A ' ^^Ü^WUTOT^<LOVAfiQ,oRAT\6l4^ : ’ r""T-i B REY-PEPTECM P C '7 t+ iL " ^ T ' ; c r .i? œ ^ :.G - 3 C 4 4 :

Contextual Info: irtef 3636 16K 2K x 8 BIPOLAR PROM 3636-1 65 ns M ax. 3636 80 ns Max. • Three-State Outputs ■ Fast Access Time: 50ns Typically ■ Low Power Dissipation: 0.05mW/Bit Typically ■ Three Chip Select Inputs for Easy Memory Expansion ■ ± 1 0 % Power Supply Tolerance

8L85

Contextual Info: v ' DPS128X24V3 - f . Dense-Pac Microsystems. Irte. ^ CERAMIC 128K X 24 CM O S SRAM VERSA-STACK PRELIMINARY DESCRIPTION: The D P S 128X 24V 3 "VERSA-STACK" module is a re v o lu tio n a ry n ew m e m o ry subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless

VN2224

Abstract: VN2222
Contextual Info: VN2222 VN2224 Supertex irte. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVdgs ^DS O N I d <ON) (max) (min) 220V 1.250 240V 1.25S2 Order Number / Package TO-92 20-Pin C-Dip 5.0A - VN2222NC - 5.0A VN2224N3 - VN2224ND Die+ r MIL visual screening available

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072x18 262,144x18 PRELIMINARY IDT72V295 IDT72V2105 Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V295 131,072x 18 IDT72V2105 262,144x 18 • Pin-compatible with the IDT72V255/72V265 and the

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72V261 LA IDT72V271 LA Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith th e ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and

72V3680

Contextual Info: Irtegiated D eviœ Technology, lie . 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO 4,096 x 36 8,192 x 36 16,384x36 32,768 x 36 65,536 x 36 131,072x36 FEATURES: • Choose among the following memory organizations: IDT72V3660 4,096 x 36 IDT72V3670 8 ,1 9 2x3 6

YG801C06R

Abstract: fuji electric marking fuji lot number
Contextual Info: This material and the Informa non herein fs the property Fuji Elee irte Co .Ltd. They shall be neither reproduced, copie o. lent, or disclosed in any way whatsoever for the use of any third psrtynor used for the manufacturing purposes without the express written consent of Fup Electric Co_ Ltd.

Contextual Info: A SFÜ lO Ptlllt Advance information 3.3V 128Kx8 lnTelliwatt'v low pow er CMOS SRAM Features • • • • irtelliw a t t activ e pow e r re d u c tio n c irc u itry 2 ,7V to 3 ,6V o p e ra tin g la n g e O rg a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b it s

Contextual Info: an A M P com pany Matched SP3T RF Switch 20-1500 MHz SW-163 V2.00 Features DI-2 • Iitem aH y Terni jnated • Irte g ra lT T L D riv er • Low L o ss - 0 .9 dB T y p ic a l • M IL-5TD -883 S c ie e n iig A v aih b Je 0.97 2 4 .6 ± 0 .5 " _ £ ( 5 . 1) '

92C605

Abstract: RADIOTRON triode rca company Scans-0017338
Contextual Info: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C