IRREVERSIBLE LOCKING Search Results

burndy Y750

Abstract: burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND® IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING ® HYGROUND Features Type YGIB . . . . . . . . . . E-20 - E-21 and Benefits . . . . . . . . . E-5 - E-6 E-1 Type YGL-C . . . . . . . . . . . . . . . . E-7

"character rom" siemens

Abstract: R105 R112 R117 5273 megatext
Contextual Info: ICs for Consumer Electronics MEGATEXT Index Edition 10.94 MEGATEXT Revision History: Previous Releases: Page 10.94 11.93, 02.94 Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible

Horizontal frequency kHz 15.625

Abstract: megatext R112 R117 S525 MSR112
Contextual Info: ICs for Consumer Electronics MEGATEXT Sync Applications Edition 10.94 MEGATEXT Sync Applications Revision History: Original Version 10.94 Previous Releases: Page Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible

Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories Advance Information FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability

Contextual Info: SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit x16 Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Voltage Read and Write Operations - 2.7-3.6V • Superior Reliability - Endurance: 100,000 Cycles minimum - Greater than 100 years Data Retention

Contextual Info: SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit x16 Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Voltage Read and Write Operations - 2.7-3.6V • Superior Reliability - Endurance: 100,000 Cycles minimum - Greater than 100 years Data Retention

Contextual Info: SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit x16 Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Voltage Read and Write Operations - 2.7-3.6V • Superior Reliability - Endurance: 100,000 Cycles minimum - Greater than 100 years Data Retention

Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B A Microchip Technology Company Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design

SST38VF6401B

Abstract: BAX15 B1273 6401B
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B A Microchip Technology Company Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design

B1277

Abstract: SST38VF6401 b123 BAX02 S1021 SST38VF6404 S7130
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability

1111111XXX

Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V

twin bnc RG-108A

Abstract: Z048 BNO-0-4-1/133 twinaxial 133NE twin bnc female 76 Z-0-4-8
Contextual Info: SERIES BNO TWINAXIAL MINIATURE CONNECTORS DESCRIPTION CONTENTS HUBER+SUHNER BNO twin connectors are two pin bayonet coupled same bayonet locking mechanism as BNC connectors for use with balanced twin-conductor cables with 75 8 to 130 8 impedance. They have polarized contacts and are not inter-mateable with BNC.

SST38VF6401

Abstract: SST38VF6404 BAX02 b1275 0000101XXX b1277 S1021 SST38VF6401-90-4C-EKE sst38vf6401-90-5i-eke SST38VF6401-90-4C
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V

Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories EOL Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability

SST38VF6401

Abstract: SST38VF6404 B1277 S7130 BAX17 b1275 S968 S56S sst38vf6402-90-5c-eke
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus A Microchip Technology Company SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Data Sheet The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, highperformance CMOS Super- Flash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared

SLB 9635

Abstract: SLE 78 slb 9635 tt 1.2 TPM infineon SLB 9635 TT iso 10373-1 MSD 7816 SLE 5542 88CNFX6600PM SLM76CF3201P 78CLX1280P
Contextual Info: Infineon Chip Card and Security ICs Portfolio Proven security you can trust [ www.infineon.com/ccs ] The Integrity Guard concept marks the dawn of the Digital Security Era. The SLE 78 controller family with Integrity Guard radicalizes design-in by easing

a8000

Abstract: E0000 AT49BV160S AT49BV160ST SA10 F0000 irreversible locking
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

F8000

Abstract: c0000 AT49BV160S AT49BV160ST SA10 07FFF
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV160S

Abstract: AT49BV160ST SA10 ATMEL 910
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

07FFF

Abstract: sa59 F8000 SA10 10ffff a8000 64c1 67FFF
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

SA10

Abstract: F8000 41/AT49BV320S
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

SA124

Abstract: Sa84 SA117 sa92 SA98 SA114 SA101 SA97 SA112 SA83
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

sa83

Abstract: SA124
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout