F8000
Abstract: c0000 AT49BV160S AT49BV160ST SA10 07FFF
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560asf8000c0000at49bv160s+3at49bv160stsa1007fff
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AT49BV160S
Abstract: AT49BV160ST SA10 ATMEL 910
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560asat49bv160sat49bv160stsa10+1atmel 910
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a8000
Abstract: E0000 AT49BV160S AT49BV160ST SA10 F0000 irreversible locking
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560asa8000e0000at49bv160s+4at49bv160stsa10f0000irreversible locking
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