IRLM220ATF Search Results
IRLM220ATF Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRLM220ATF |
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200V N-Channel A-FET | Original | 246.59KB | 7 |
IRLM220ATF Price and Stock
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onsemi IRLM220ATFMOSFET N-CH 200V 1.13A SOT223-4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLM220ATF | Cut Tape |
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IRLM220ATF | Reel | 4,000 |
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IRLM220ATF | 374 | 1 |
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Fairchild Semiconductor Corporation IRLM220ATFPOWER FIELD-EFFECT TRANSISTOR, 1.13A I(D), 200V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLM220ATF | 15 |
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IRLM220ATF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
Original |
IRLM220A OT-223 IRLM220ATF OT-223 IRLM220A | |
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Contextual Info: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
Original |
IRLM220A OT-223 IRLM220ATF |