IRLI530 Search Results

IRLI530 Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRLI530A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF	234.12KB	7
IRLI530A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF	279.58KB	9
IRLI530A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	158.59KB	6
IRLI530G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRLI530G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP	Original	PDF		8
IRLI530G	International Rectifier	HEXFET Power Mosfet	Scan	PDF	175.87KB	6
IRLI530G	International Rectifier	HEXFET Power MOSFET	Scan	PDF	175.88KB	6
IRLI530G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	41.91KB	1
IRLI530G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	103.09KB	1
IRLI530GPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP	Original	PDF		8
IRLI530GPBF	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Scan	PDF	175.88KB	6
IRLI530N	International Rectifier	HEXFET Power MOSFET	Original	PDF	205.51KB	8
IRLI530N	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLI530N with Standard Packaging	Original	PDF	156.24KB	9
IRLI530N	International Rectifier	HEXFET Power MOSFET	Original	PDF	152.06KB	8

IRLI530N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRLI530NPBF	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI530N with Lead Free Packaging	Original	PDF	156.24KB	9
IRLI530NPBF	International Rectifier		Original	PDF	152.06KB	8

IRLI530 Price and Stock

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Infineon Technologies AG IRLI530NPBF MOSFET, POWER, N-CH, VDSS 100V, RDS(ON) 0.1OHM, ID 12A, TO-220 FULL-PAK, PD 41W,-55C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IRLI530NPBF	Bulk			700	1 - 10 - 100 - 1000 $4.78 10000 $4.33	Get Quote
Bristol Electronics	IRLI530NPBF		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IRLI530NPBF		9		1	1 - 10 - 100 $0.62 1000 $0.52 10000 $0.46	Buy Now
International Rectifier IRLI530NPBF HEXFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRLI530NPBF		52			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRLI530 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiHLI530G Abstract: IRLI530G SiHLI530G-E3 IRLI530 Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 18-jul-08 +2sihli530g-e3 irli530	PDF
IRL530N Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	irli530npbf o-220 i840g irl530n	PDF
Contextual Info: International I« Rectifier 4055452 0015^04 3T7 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER PD-9.844 IIN R IRLI530G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5V	OCR Scan	irli530g t0-220 s5452	PDF
SiHLI530G Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 18-jul-08	PDF
IRFI840G Abstract: EK24 Contextual Info: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "	Original	irli530npbf o-220 i840g irfi840g +1ek24	PDF
Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 100V l	Original	1350b irli530n o-220 elimina33	PDF
SiHLI530G Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 2011/65/eu +22002/95/ec 12-mar-12	PDF
Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	irli530npbf o-220 i840g	PDF
Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 11-mar-11	PDF
Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 2011/65/eu +22002/95/ec 12-mar-12	PDF
DSA0051623 Abstract: IRL530N IRLI530N Contextual Info: PRELIMINARY PD -9.1350 IRLI530N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.10Ω	Original	irli530n o-220 dsa0051623 irl530n	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	1350b irli530n o-220 irl530n	PDF
Contextual Info: PD - 95030 IRLI530GPbF • Lead-Free www.irf.com 1 2/19/04 IRLI530GPbF 2 www.irf.com IRLI530GPbF www.irf.com 3 IRLI530GPbF 4 www.irf.com IRLI530GPbF www.irf.com 5 IRLI530GPbF 6 www.irf.com IRLI530GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	irli530gpbf o-220	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	1350b irli530n o-220 irl530n	PDF

SiHLI530G Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
IRLI530G Contextual Info: PD-9.844 International S Rectifier IRLI530G HEXFET Power MOSFET • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • Fast Switching • Ease of Paralleling	OCR Scan	irli530g o-220	PDF
IRLI530G Abstract: 58AB SiHLI530G Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	irli530g sihli530g o-220 12-mar-07 +158ab	PDF
IRL530N Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	irli530npbf o-220 i840g irl530n	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-184-41 IRLI530N HEXFET TO-220 PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive	Original	irli530n o-220 1350b irl530n	PDF
Contextual Info: PD - 95030 IRLI530GPbF • Lead-Free Document Number: 91311 2/19/04 www.vishay.com 1 IRLI530GPbF Document Number: 91311 www.vishay.com 2 IRLI530GPbF Document Number: 91311 www.vishay.com 3 IRLI530GPbF Document Number: 91311 www.vishay.com 4 IRLI530GPbF Document Number: 91311	Original	irli530gpbf o-220 12-mar-07	PDF
Contextual Info: PD - 9 .1350B In te rn a tio n a l IQ R Rectifier IRLI530N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated	OCR Scan	1350b irli530n	PDF
Contextual Info: PD - 95030 IRLI530GPbF • Lead-Free Document Number: 91311 2/19/04 www.vishay.com 1 IRLI530GPbF Document Number: 91311 www.vishay.com 2 IRLI530GPbF Document Number: 91311 www.vishay.com 3 IRLI530GPbF Document Number: 91311 www.vishay.com 4 IRLI530GPbF Document Number: 91311	Original	irli530gpbf o-220 08-mar-07	PDF
IRL530N Abstract: IRLI530N Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD -9.1350 IRLI530N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	Original	irli530n irl530n	PDF
731 MOSFET Abstract: AN609 IRLI530G SiHLI530G Contextual Info: IRLI530G_RC, SiHLI530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	irli530g sihli530g an609 9236m +64404m 8066m 9430m 1445m 02-nov-10 731 mosfet	PDF

IRLI530 Search Results

IRLI530 Datasheets (17)

IRLI530 Price and Stock

Infineon Technologies AG IRLI530NPBF

International Rectifier IRLI530NPBF

IRLI530 Datasheets Context Search

SiHLI530G

IRL530N

SiHLI530G

IRFI840G

SiHLI530G

DSA0051623

1350B

1350B

SiHLI530G

IRLI530G

IRLI530G

IRL530N

1350B

IRL530N

731 MOSFET