IRL 1540 N Search Results

IRL 1540 N Result Highlights (5)

Part	Manufacturer	Description	Download
77315-401-35LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 35 Positions 2.54 mm (0.100in) Pitch, Right Angle	PDF
68015-406HLF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Single Row, 6 Positions, 2.54 mm (0.100in) Pitch.	PDF
68021-540H	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 40 Positions, 2.54 mm (0.100in) Pitch.	PDF
51915-409LF	Amphenol Communications Solutions	PwrBlade®, Power Connectors, 4P 24S Right Angle Receptacle, Solder To Board	PDF
68015-407HALF	Amphenol Communications Solutions	BS SR RA HDR TR 1X7	PDF

IRL 1540 N Price and Stock

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International Rectifier


International Rectifier IRLI540N 23 A, 100 V, 0.053 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB (Also Known As: IRL1540N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	IRLI540N		81			1 $1.35 10 $1.35 100 $0.63 1000 $0.63 10000 $0.63	Buy Now
	IRLI540N		13			1 $42.00 10 $39.90 100 $37.80 1000 $37.80 10000 $37.80	Buy Now

IRL 1540 N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TriQuint €► Advance Product Information SEMICONDUCTOR« 17-21 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9088A-EPU Primary Applications Satellite Systems 17-21 GHz Frequency Range 22 dBm @ P2dB Nominal Pout	OCR Scan	TGA9088A-EPU EG1901A TGA9088A)	PDF
IrL 1540 N Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF Contextual Info: UGF15030 30W, 1435-1540 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 1435 to 1540 MHz. Rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF15030 26VDC, 1540MHz, UGF15030F UGF15030 IrL 1540 N 1540MHz F1540 ATC100 Cree Microwave ZENER 26v 10UF 22UF	PDF
IrL 1540 N Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H	PDF
IrL 1540 N Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3	PDF
Contextual Info: PGE 609 02 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +16 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses	Original	RS-232) SE-164 1522-PGE	PDF
Contextual Info: PGE 609 05 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +19 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses	Original	RS-232) SE-164 1522-PGE	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3	PDF
IrL 1540 N Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22	PDF
IRL 1630 Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IRL 1630 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HSR3 MRF7S16150HR	PDF
Contextual Info: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY	Original	SMA661AS OT666) OT666 SMA661AS 575GHz)	PDF
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor	PDF
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ	PDF
atx smps schematic diagram Abstract: 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330 NCP4330DR2G TL431 ac-dc inverter applications Contextual Info: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the	Original	NCP4330 NCP4330 NCP4330-based NCP4330/D atx smps schematic diagram 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330DR2G TL431 ac-dc inverter applications	PDF

CAPACITOR chip murata mtbf Abstract: BD136 Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 MRF15090 MRF15090/D CAPACITOR chip murata mtbf BD136	PDF
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf	PDF
CAPACITOR chip murata mtbf Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 DEVICEMRF15090/D CAPACITOR chip murata mtbf MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf	PDF
BD136 Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 MRF15090 DEVICEMRF15090/D BD136	PDF
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3 Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 MRF15090/D* CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3	PDF
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 DEVICEMRF15090/D	PDF
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	MRF15090/D MRF15090 CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR	PDF
SU 179 transistor Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
mallory 170 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170	PDF
murata capacitor 0603 GRM188 Abstract: murata grm188 capacitor gps lna Contextual Info: SMA661AS Fully integrated GPS LNA IC Feature summary • Power down function ■ Integrated matching networks ■ Low noise figure 1.4 dB @ 1.575 GHz ■ High gain 17 dB @ 1.575 GHz ■ High linearity IIP3 = +3dBm ■ Temperature compensated ■ Unconditionally stable	Original	SMA661AS OT666 SMA661AS SMA661AS, murata capacitor 0603 GRM188 murata grm188 capacitor gps lna	PDF

IRL 1540 N Search Results

IRL 1540 N Result Highlights (5)

IRL 1540 N Price and Stock

International Rectifier IRLI540N

IRL 1540 N Datasheets Context Search

IrL 1540 N

IrL 1540 N

IrL 1540 N

IrL 1540 N

IRL 1630

178 09T

rohm mtbf

atx smps schematic diagram

CAPACITOR chip murata mtbf

capacitor mallory

CAPACITOR chip murata mtbf

BD136

CAPACITOR chip murata mtbf

CAPACITOR chip murata mtbf

SU 179 transistor

mallory 170

murata capacitor 0603 GRM188