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    IRG7S Search Results

    IRG7S Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRG7S313UTRLPBF
    		International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 330V 40A 78W D2PAK Original PDF 8
    IRG7SC12FPBF
    		International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 24A 69W D2PAK Original PDF 10
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    IRG7S Price and Stock

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    Infineon Technologies AG IRG7S313UTRLPBF

    IGBT TRENCH 330V 40A D2PAK
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    DigiKey IRG7S313UTRLPBF Cut Tape
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    RS IRG7S313UTRLPBF Bulk 800
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    Infineon Technologies AG IRG7S313UPBF

    Igbt, n Channel,330V,40A, d2Pak; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.14V; Power Dissipation:78W; Collector Emitter Voltage Max:330V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Infineon IRG7S313UPBF
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    Newark IRG7S313UPBF Bulk 1
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    RS IRG7S313UPBF Bulk 350
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    International Rectifier IRG7S313U

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    Quest Components IRG7S313U 617
    • 1 $33.27
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    International Rectifier IRG7SC28U

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    Quest Components IRG7SC28U 250
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    International Rectifier IRG7SLC12F

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    Quest Components IRG7SLC12F 152
    • 1 $18.75
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    IRG7S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient


    Original     		IRG7SC12FPbF EIA-418. PDF

    IRG7SC12FPBF

    Abstract: C-150 IRF530S irg7sc12
    Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution


    Original     		IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12 PDF

    IRG7SC28U

    Contextual Info: PD - 97569 PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7SC28UPbF IRG7SC28U PDF

    IRG7SC28U

    Abstract: IRG7SC28 IRG7SC28UPBF IRG7S 626t
    Contextual Info: PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7569A IRG7SC28UPbF IRG7SC28U IRG7SC28 IRG7SC28UPBF IRG7S 626t PDF

    irg7s319

    Contextual Info: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7S319UPbF EIA-418. irg7s319 PDF

    irg7s313

    Contextual Info: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7402A IRG7S313UPbF EIA-418. irg7s313 PDF

    IRG7S319

    Abstract: IRF530S JESD22-A114 irg7s319upbf IRG7S
    Contextual Info: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7S319UPbF which90 EIA-418. IRG7S319 IRF530S JESD22-A114 irg7s319upbf IRG7S PDF

    irg7s313u

    Abstract: IRG7S313UPBF irg7s313 IRF530S JESD22-A114 IRG7S3
    Contextual Info: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7402A IRG7S313UPbF whic90 EIA-418. irg7s313u IRG7S313UPBF irg7s313 IRF530S JESD22-A114 IRG7S3 PDF