IRG4R Search Results

AN-994

Abstract: IRG4RC10S
Contextual Info: PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

2A127

Abstract: AN-994 IRG4RC10K
Contextual Info: PD 91735A IRG4RC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

IRG4RC10UD

Contextual Info: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter

AN-994

Abstract: EIA-541 IRG4RC10SD inverter circuit 200v to 100v
Contextual Info: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

Contextual Info: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort

Contextual Info: PD 95389 IRG4RC10KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

AN-994

Abstract: EIA-541 IRFR120 97003
Contextual Info: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

Contextual Info: PD - 95192A IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

all transistor datasheet IRF 310

Abstract: EIA 481 7105 EIA-541 IRG4RC10S
Contextual Info: PD- 91732B IRG4RC10S www.irf.com 1 07/04/07 IRG4RC10S 1.8 2 www.irf.com IRG4RC10S www.irf.com 3 IRG4RC10S 4 www.irf.com IRG4RC10S www.irf.com 5 IRG4RC10S 6 www.irf.com IRG4RC10S www.irf.com 7 IRG4RC10S D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches)

IRFR120

Abstract: EIA-541
Contextual Info: PD- 95766 IRG4RC10SPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10SPbF 2 www.irf.com IRG4RC10SPbF www.irf.com 3 IRG4RC10SPbF 4 www.irf.com IRG4RC10SPbF www.irf.com 5 IRG4RC10SPbF 6 www.irf.com IRG4RC10SPbF www.irf.com 7 IRG4RC10SPbF D-Pak TO-252AA Package Outline

AN-994

Abstract: IRG4RC20F
Contextual Info: PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

AN-994

Abstract: IRG4RC10U
Contextual Info: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

DIODE V97

Contextual Info: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .

Contextual Info: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline

AN-994

Abstract: IRG4RC10SD
Contextual Info: PD-91678 IRG4RC10SD PRELIMINARY Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

AN-994

Abstract: IRG4RC10K
Contextual Info: PD - 91735 IRG4RC10K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

IRG4RC10KD

Abstract: AN-994
Contextual Info: PD -91736 IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

Contextual Info: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline

AN-994

Abstract: IRG4RC10SD Transistor Mosfet N-CH 200V 40A
Contextual Info: 2,'$%& IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

GE 443

Abstract: IR igbt gate driver ic AN-994 IRG4RC20F
Contextual Info: PD - 91731 IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: IRG4RC10U Tape & Reel Information TO-252AA TR TRR 16 .3 .64 1 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .

AN-994

Abstract: IRG4RC10U m 60 n 03 g10
Contextual Info: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

AN-994

Abstract: EIA-541 IRFR120
Contextual Info: PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

EIA-541

Contextual Info: PD- 95766A IRG4RC10SPbF • Lead-Free www.irf.com 1 06/14/07 IRG4RC10SPbF 1.8 2 www.irf.com IRG4RC10SPbF www.irf.com 3 IRG4RC10SPbF 4 www.irf.com IRG4RC10SPbF www.irf.com 5 IRG4RC10SPbF 6 www.irf.com IRG4RC10SPbF www.irf.com 7 IRG4RC10SPbF D-Pak TO-252AA Package Outline