IRFS645 Search Results

IRFS645 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFS645		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	120.28KB	1
IRFS645		Unknown	FET Data Book	Scan	PDF	39.71KB	1
IRFS645		Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF	316.96KB	5

IRFS645 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFS540 Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522 Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00	OCR Scan	o-220 irfsz22 irfsz20 irfsz32 +11irfsz30 irfsz42 irfsz40 irfsz25 irfsz24 irfsz35 irfs540 irfs541 irfs634 irfs630 irfs522	PDF
Contextual Info: N-CHANNEL POWER MOSFETS IRFS644/645 FEATURES • • • • • • • Lower R d s <o n > Improved inductive ruggedness Fast switching times Rugged poiysiiicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	irfs644/645 irfs644 irfs645	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2n3904 2n3906 2n4401 2n4403 +162n5087 2n5088 2n5551 2n6515 ksp06 ksp10 irf9210 darlington npn 600v 8a transistor fet 10a 600v darlington npn 600v 12a transistor transistor irf9640 n-ch power mosfet to-92 600v 12a to220f npn transistor 600v 5a to-220 transistor irf620 ksh117-1	PDF
IRFS645 Abstract: IRFS644 Contextual Info: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	irfs644/645 to-220f irfs644 irfs645 +2gg173h3 virfs644	PDF