IRFR430 Search Results

Contextual Info: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: IRFR430B / IRFU430B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SiHFU430A

Abstract: IRFR430A IRFU430A SiHFR430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRFR430

Contextual Info: IRFR430 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .5 Î 2 3 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

94356

Abstract: IRFR120 IRFR430A IRFU120 IRFU430A
Contextual Info: PD - 94356 IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRF Power MOSFET code marking

Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF IRFU430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRFR120

Abstract: IRFR430A IRFU120 IRFU430A 753x
Contextual Info: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

EIA-541

Abstract: IRFR120 IRFR430A IRFU120 IRFU430A 4.5V TO 100V INPUT REGULATOR
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF IRFU430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: IRFR430 Advanced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.5 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: IRFR430A IRFU430A Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching I-Pak IRFU430A D-Pak IRFR430A l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRFR430A

Abstract: IRFU430A SiHFR430A SiHFR430A-E3 SiHFR430A-GE3 SiHFU430A irfr430atrlpbf 4.5V TO 100V INPUT REGULATOR
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

IRFR430

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR430 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

IRFR430B

Abstract: IRFU430B
Contextual Info: IRFR430B / IRFU430B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and

irfr430atrpbf

Abstract: DM 0265 R
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

IRF Power MOSFET code marking

Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
Contextual Info: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF IRFU430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

Contextual Info: IRFR430 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.5 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V