IRFP460 IR Search Results

irfp460

Abstract: irfp460 30v
Contextual Info: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

irfp460 dc motor circuit

Abstract: IRFP460 TB334
Contextual Info: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP460

Abstract: irfp460s
Contextual Info: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ) s

Contextual Info: IRFP460 N - CHANNEL 500V - 0.22 Q - 20 A - TO-247 PowerMESH MOSFET TYPE V dss IRFP460 500 V Id R D S o n < 0.27 a 20 A Q. • TYPICAL RDS(on) = 0.22 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

IRFP460

Abstract: datasheet irfp460 mosfet SCHEMATIC WITH irfp460 irfp460 power supply applications irfp460 mosfet IRFP460N
Contextual Info: IRFP460  N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE IRFP460 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP460 application

Abstract: SOT429 IRFP460 APPLICATION NOTE IRFP460 PHW20N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP460 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

IRFP460 APPLICATION NOTE

Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP460

Abstract: IRFP460 IR irfp460 mosfet
Contextual Info: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

datasheet irfp460 mosfet

Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP460 S e m iconductor Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET • 2 0 A ,5 0 0 V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFP460 application

Abstract: IRFP460PBF Vishay TO-247AC Package IRFP460 APPLICATION NOTE
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

IRFP460 application

Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

IRFP460

Abstract: irfp460pbf IRFP460 application irfp460 datasheet SiHFP460 irfp460 mosfet
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

IRFP460

Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
Contextual Info: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0

IRFP462

Abstract: IRFP460 G8TE of IRFP460 IHFP460
Contextual Info: Preview Products File Number IRFP460, IRFP462 2291 Avalanche-Energy-Rated N-Channel Power MOSFETs 20 A and 17 A, 500 V i"DS on = 0.27 n and 0.35 fl N-CHANNEL ENHANCEMENT MODE o Features: • S ingle pulse avalanche energy rated • SOA is pow er-dissipation lim ited

IRFP460

Abstract: irfp460 power supply applications IRFP462 irfp460 dc motor circuit IRFP460 IR PED relay irfp460 i
Contextual Info: IRFP460, IRFP462 fÇ j HARRIS S E M I C O N D U C T O R 20A and 17A, 500V, 0.27 and 0.35 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfp460 mosfet

Contextual Info: IRFP460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous

u400

Abstract: IRFP460 IC250 20U20
Contextual Info: Транзисторы для силовой электроники ПОЛЕВЫЕ ТРАНЗИСТОРЫ КП460 IRFP460 N-канальный МОП ПТ Uси=500 В; Rси=0.27 Ом; Iс=20 А z Высокие динамические характеристики

SCHEMATIC POWER SUPPLY WITH IGBTS

Abstract: smps 450W IRFP460 application IRFP460 full bridge make full-bridge SMPS IRFP460 APPLICATION NOTE IRFP460 h motor bridge SCHEMATIC 450w smps dc-dc converter with irfp460 schematic SMPS 12V
Contextual Info: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications Application Note September 2000 AN-7523 Authors: Alexander H. Craig and Sampat Shekhawat IGBTs have been providing motor drive circuit designers with the ability to increase power density and reduce overall system

1RFP360

Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
Contextual Info: THOMSON/ DISTRIBUTOR SflE D • TD2ba73 International t o r Rectifier Cl[]05ñ04 3TD ■ HEXFET Power MOSFETs Plastic insertable Package T O -2 4 7 N-Channel Part Number V q s Drain Source Voltage (Volts) IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 IRFP360 400

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

DS0026 power mosfet driver

Abstract: IRFP460 application IRF510 12v led switch IN5820 UFN150 u 118 pin configuration irf510 Power MOSFET gate drive pulse transformer high voltage gate drive transformer SCHEMATIC WITH irfp460
Contextual Info: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,