IRFP460 DATASHEET Search Results

IRFP460 APPLICATION NOTE

Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

datasheet irfp460 mosfet

Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP460 application

Abstract: IRFP460PBF Vishay TO-247AC Package IRFP460 APPLICATION NOTE
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

IRFP460 application

Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

IRFP460 application

Abstract: application IRFP460
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.25Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 22 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

irfp460 mosfet

Contextual Info: IRFP460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

SCHEMATIC POWER SUPPLY WITH IGBTS

Abstract: smps 450W IRFP460 application IRFP460 full bridge make full-bridge SMPS IRFP460 APPLICATION NOTE IRFP460 h motor bridge SCHEMATIC 450w smps dc-dc converter with irfp460 schematic SMPS 12V
Contextual Info: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications Application Note September 2000 AN-7523 Authors: Alexander H. Craig and Sampat Shekhawat IGBTs have been providing motor drive circuit designers with the ability to increase power density and reduce overall system

IXTH40N25

Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025

40HFL40S02

Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 IRFP460
Contextual Info: 80SQ. Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: 242NQ030R Vishay High Power Products Schottky Rectifier, 240 A FEATURES • • • • • Lug terminal cathode HALF-PAK D-67 Reverse • • • Base anode • 150 °C TJ operation Unique high power, HALF-PAK module Replaces four parallel DO-5’s Easier to mount and lower profile than DO-5’s

Contextual Info: 243NQ100PbF Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability

FCSP0530

Abstract: 40HFL40S02 IRFP460
Contextual Info: FCSP0530TR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm RoHS • Low thermal resistance COMPLIANT • Supplied tested and on tape and reel

90SQ

Abstract: 90SQ030 90SQ035 90SQ040 90SQ045 IRFP460 40HFL40S02
Contextual Info: 90SQ. Series Vishay High Power Products Schottky Rectifier, 9 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: 183NQ100PbF Vishay High Power Products Schottky Rectifier, 180 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: 123NQ100PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: FCSP130LTR Vishay High Power Products FlipKY , 1 A Chip Scale Package Schottky Barrier Rectifier FEATURES • Ultra low VF per footprint area • Low leakage RoHS • Low thermal resistance COMPLIANT • One-fifth footprint of SMA • Super low profile 0.6 mm

Contextual Info: 175BGQ045 Vishay High Power Products Schottky Rectifier, 175 A FEATURES Cathode • • • • • 150 °C TJ operation High frequency operation Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term

Contextual Info: 241NQ045R Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 175 °C TJ operation Lug terminal cathode • Unique high power, HALF-PAK module • Replaces four parallel DO-5’s • Easier to mount and lower profile than DO-5’s HALF-PAK D-67 Reverse

Contextual Info: 122NQ030PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: 183NQ100R Vishay High Power Products Schottky Rectifier, 180 A FEATURES • 175 °C TJ operation Lug terminal cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Low forward voltage drop

Contextual Info: 125NQ015PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 125 °C TJ operation VR < 5 V Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability