IRFP450 FROM ST Search Results

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

IRFP450

Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
Contextual Info: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

irfp450

Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Contextual Info: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRFP450

Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
Contextual Info: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP450 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

Contextual Info: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFP450

Abstract: IRFP451 bonding TO-247 IRFP453 IRFP452
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 H a rris 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

application IRFP450

Contextual Info: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 . . . . . VDSS 500 V RDS(on) ID < 0.4 n 14 A TYPICAL Ros(on)= 0.33 Q

IREP450

Abstract: irfp450 FP450 DIODE C549 IRFP451 IRFP452 diode c552 C546 A FP453 diode C546
Contextual Info: HE D I 4Û55M5E 00007113 »4 | Data Sheet No. PD-9.458B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* HEXFETTRANSISTORS IM - C H A N N E L I « R IRFP45Q IRFP451 IRFP452 IRFP453 Product Summary 500 Volt, 0.40 Ohm HEXFET

Contextual Info: H a r r IRFP450, IRFP451, IRFP452, IRFP453 i s s e m i c o n d u c t o r 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features 12A and 14A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP450

Abstract: IRFP452 IRFP451 IRFP453 TA17435 TB334 irfp-450
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 S E M I C O N D U C T O R 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 12A and 14A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP450

Abstract: power switching with IRFP450 schematic IRFP450S tr irfp450
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP450

Abstract: power switching with IRFP450 schematic
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IFRP450

Abstract: application IRFP450 IGBT loss calculate igbt 500V 2A irfp460 igbt IRFP450 MOSFET datasheet irfp450 mosfet 5A IGBT snubber resistance of IGBT datasheet irfp460 igbt
Contextual Info: Index DT 93-3 500V IGBTS REPLACE MOSFETS AT LOWER COST by Laszlo Kiraly Introduction: Design Example: International Rectifier's 500V IGBTs have switching characteristics that are very close to those of power MOSFETs, without sacrificing the superior conduction characteristics of IGBTs. They offer

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

application IRFP450

Abstract: IRFP450 SiHFP450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Abstract: IRFP450 SiHFP450 irfp450 mosfet irfp450 mosfet to220 siliconix irfp450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

power switching with IRFP450 schematic

Abstract: switching with IRFP450 schematic IRFP450 datasheet irfp450 mosfet IRFP450 from st irfp450 mosfet application IRFP450
Contextual Info: IRFP450  N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Abstract: power switching with IRFP450 schematic switching with IRFP450 schematic datasheet irfp450 mosfet application IRFP450
Contextual Info: IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ) s (

IRFP450

Abstract: IRFP450FI 0613D IRFW450
Contextual Info: IRFP450/FI IRFW450 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID IRFP450 IRFP450FI IRFW450 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14 A 9A 14 A • ■ ■ ■ TO-247 TYPICAL RDS(on) = 0.33 Ω AVALANCHE RUGGED TECHNOLOGY