IRFP240 IR Search Results

irfp240

Abstract: irfp240 circuit diagram IRFP240FI 71513 schematic diagram UPS irfp240f
Contextual Info: 2 ^ 5 3 7 0 0 4 S 733 S 3 T • SGTH SCS-THOMSON IRFP240 IRFP240FI ID MaiOT(ö MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP240 IRFP240FI . ■ . . V dss RüS(on) Id 200 V 200 V < 0.18 n < 0.18 Q 20 A 12 A TYPICAL RDS(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY

irfp240

Contextual Info: N-CHANNEL POWER MOSFETS IRFP240/241 FEATURES • Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe operating area • Improved high tem perature reliability

IRFP630

Abstract: Irfp250 irfp460 IRFPG60
Contextual Info: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460

IRFP240

Abstract: 75150TC
Contextual Info: PD-9.444C International «»Rectifier IRFP240 HEXFEr Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Centra! Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS

Contextual Info: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP240

Abstract: irfp240 ir
Contextual Info: PD-9.444C International S Rectifier IRFP240 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0.18Q

irf640

Abstract: irfp240 for irf640 irfp242 IRF640 n-channel MOSFET IRFP243 Diode c 642 IR 643 power MOSFET IRF640 Mosfet irfp240
Contextual Info: N-CHANNEL POWER MOSFETS IRF640/641/642/643 IRFP240/241/242/243 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate ceil structure Lower input capacitance Extended safe operating area

IRFP240 transistor

Contextual Info: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TO218 package

Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package
Contextual Info: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate

1RFP240

Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
Contextual Info: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET

IRFP240

Abstract: irfp240 transistor TA17422 TB334
Contextual Info: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP240

Abstract: TA17422 TB334
Contextual Info: IRFP240 Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP240

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the

irfp240

Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Contextual Info: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate

irfp240

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the

IRFP240

Abstract: irfp240pbf
Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

IRFP240

Abstract: paralleling SiHFP240 sihfp240-e3
Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

IRFP240PBF

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the

IRFP240

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the

IRFP240

Abstract: Harris Semiconductor irfp240 TA17422 irfp243 harris transistors IRFP241
Contextual Info: IRFP240, IRFP241, IRFP242, IRFP243 S E M I C O N D U C T O R 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP240

Abstract: IRF640 SAMSUNG
Contextual Info: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re