IRFNL210BTA_FP001 Search Results
IRFNL210BTA_FP001 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IRFNL210BTA_FP001 |
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200V N-Channel B-FET TO-92L | Original | 693.32KB | 8 | ||
IRFNL210BTA-FP001 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 1A TO-92L | Original | 682.58KB |
IRFNL210BTA_FP001 Price and Stock
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Rochester Electronics LLC IRFNL210BTA-FP001IRFNL210 - POWER MOSFET, N-CHANN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFNL210BTA-FP001 | Bulk | 437 |
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onsemi IRFNL210BTA-FP001MOSFET N-CH 200V 1A TO92L |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFNL210BTA-FP001 | Ammo Pack | 2,000 |
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IRFNL210BTA-FP001 | 437 | 1 |
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IRFNL210BTA_FP001 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, |
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IRFNL210B | |
IRFNL210BTA_FP001Contextual Info: IRFNL210B IRFNL210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
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IRFNL210B IRFNL210B IRFNL210BTA FP001 IRFNL210BTA_FP001 |