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    IRFIZ24 Search Results

    IRFIZ24 Datasheets (29)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFIZ24
    International Rectifier FullPak - Fully Isolated HEXFET Scan PDF 68.52KB 1
    IRFIZ24
    Samsung Electronics N-Channel Power Mosfets Scan PDF 143.5KB 3
    IRFIZ24A
    Fairchild Semiconductor N-CHANNEL POWER MOSFET Original PDF 223.04KB 7
    IRFIZ24A
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFIZ24A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 157.9KB 6
    IRFIZ24A
    Samsung Electronics Advanced Power MOSFET Scan PDF 352.34KB 6
    IRFIZ24E
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24E with Standard Packaging Original PDF 118.84KB 9
    IRFIZ24E
    International Rectifier HEXFET Power MOSFET Original PDF 114.66KB 8
    IRFIZ24E
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFIZ24EPBF
    International Rectifier Original PDF 114.65KB 8
    IRFIZ24EPBF
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFIZ24E with Lead Free Packaging Original PDF 118.84KB 9
    IRFIZ24G
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFIZ24G
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 14A TO220FP Original PDF 8
    IRFIZ24G
    International Rectifier HEXFET Power Mosfet Scan PDF 179.05KB 6
    IRFIZ24G
    International Rectifier HEXFET Powe MOSFET Scan PDF 179.06KB 6
    IRFIZ24G
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.09KB 1
    IRFIZ24G
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.96KB 1
    IRFIZ24GPBF
    International Rectifier 60V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF 937.74KB 7
    IRFIZ24GPBF
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 14A TO220FP Original PDF 8
    IRFIZ24N
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24N with Standard Packaging Original PDF 109.36KB 9
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    IRFIZ24 Price and Stock

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    Vishay Siliconix IRFIZ24GPBF

    MOSFET N-CH 60V 14A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ24GPBF Tube 554 1
    • 1 $2.15
    • 10 $2.15
    • 100 $0.93
    • 1000 $0.81
    • 10000 $0.72
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    Infineon Technologies AG IRFIZ24NPBF

    MOSFET N-CH 55V 14A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ24NPBF Tube 6 1
    • 1 $1.87
    • 10 $1.87
    • 100 $1.87
    • 1000 $1.87
    • 10000 $1.87
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    Avnet Americas IRFIZ24NPBF Tube 2,000
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    Verical () IRFIZ24NPBF 8,332 73
    • 1 -
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    • 100 $0.41
    • 1000 $0.41
    • 10000 $0.41
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    IRFIZ24NPBF 2,922 444
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    • 1000 $0.70
    • 10000 $0.63
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    IRFIZ24NPBF 846 444
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    IRFIZ24NPBF 360 16
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    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
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    Arrow Electronics IRFIZ24NPBF 360 1
    • 1 $0.36
    • 10 $0.36
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
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    Rochester Electronics IRFIZ24NPBF 3,885 1
    • 1 -
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    • 100 $0.68
    • 1000 $0.56
    • 10000 $0.50
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    TME IRFIZ24NPBF 47 1
    • 1 $1.29
    • 10 $1.19
    • 100 $0.68
    • 1000 $0.68
    • 10000 $0.66
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    Chip One Stop IRFIZ24NPBF Tube 8,332 0 Weeks, 1 Days 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    Chip Stock IRFIZ24NPBF 5,393
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    Vishay Siliconix IRFIZ24G

    MOSFET N-CH 60V 14A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ24G Tube 1,000
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    • 1000 $1.72
    • 10000 $1.72
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    Infineon Technologies AG IRFIZ24E

    MOSFET N-CH 60V 14A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ24E Tube 50
    • 1 -
    • 10 -
    • 100 $1.01
    • 1000 $1.01
    • 10000 $1.01
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    Infineon Technologies AG IRFIZ24EPBF

    MOSFET N-CH 60V 14A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ24EPBF Tube
    • 1 -
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    RS IRFIZ24EPBF Bulk 3,000
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    • 10000 $1.90
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    IRFIZ24 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 94875 IRFIZ24GPbF • Lead-Free Document Number: 91187 12/9/03 www.vishay.com 1 IRFIZ24GPbF Document Number: 91187 www.vishay.com 2 IRFIZ24GPbF Document Number: 91187 www.vishay.com 3 IRFIZ24GPbF Document Number: 91187 www.vishay.com 4 IRFIZ24GPbF Document Number: 91187


    Original
    IRFIZ24GPbF O-220 08-Mar-07 PDF

    IRFz24n equivalent

    Abstract: IRFI840G IRFZ24N
    Contextual Info: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original
    IRFIZ24NPbF O-220 IRFZ24N IRFI84 IRFI840G IRFz24n equivalent IRFI840G PDF

    Contextual Info: PD - 94875 IRFIZ24GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIZ24GPbF 2 www.irf.com IRFIZ24GPbF www.irf.com 3 IRFIZ24GPbF 4 www.irf.com IRFIZ24GPbF www.irf.com 5 IRFIZ24GPbF 6 www.irf.com IRFIZ24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original
    IRFIZ24GPbF O-220 PDF

    SiHFIZ24G

    Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    IRFIZ24G, SiHFIZ24G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiHFIZ24G

    Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    IRFIZ24G, SiHFIZ24G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRFZ24N equivalent

    Abstract: diode c329 c328 diode c328 equivalent 12014A
    Contextual Info: PD - 9.1501A International IQ R Rectifier IRFIZ24N HEXFET8 Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55V ^DS on = 0 . 0 7 Q


    OCR Scan
    IRFIZ24N O-220 C-328 C-329 IRFZ24N equivalent diode c329 c328 diode c328 equivalent 12014A PDF

    Contextual Info: IRFIZ24G_RC, SiHFIZ24G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    IRFIZ24G SiHFIZ24G AN609, 31-May-10 PDF

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet PDF

    IRFZ24N

    Contextual Info: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24EPbF O-220 I840G IRFZ24N PDF

    IRFIZ24G

    Abstract: SiHFIZ24G SiHFIZ24G-E3
    Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


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    IRFIZ24G, SiHFIZ24G O-220 18-Jul-08 IRFIZ24G SiHFIZ24G-E3 PDF

    IRFIZ24G

    Abstract: SiHFIZ24G SiHFIZ24G-E3
    Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original
    IRFIZ24G, SiHFIZ24G O-220 18-Jul-08 IRFIZ24G SiHFIZ24G-E3 PDF

    Contextual Info: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier


    OCR Scan
    PDF

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480 PDF

    ir 9751

    Abstract: IRFIZ24G CD 1517
    Contextual Info: PD-9.751 International [^R ectifier IRFIZ24G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance D /


    OCR Scan
    IRFIZ24G O-220 ir 9751 IRFIZ24G CD 1517 PDF

    IRFZ24N equivalent

    Abstract: IRFI840G IRFZ24N
    Contextual Info: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24NPbF O-220 IRFI84 IRFI840G IRFZ24N equivalent IRFI840G IRFZ24N PDF

    Contextual Info: PD - 94875 IRFIZ24GPbF • Lead-Free Document Number: 91187 12/9/03 www.vishay.com 1 IRFIZ24GPbF Document Number: 91187 www.vishay.com 2 IRFIZ24GPbF Document Number: 91187 www.vishay.com 3 IRFIZ24GPbF Document Number: 91187 www.vishay.com 4 IRFIZ24GPbF Document Number: 91187


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    IRFIZ24GPbF O-220 12-Mar-07 PDF

    IRFI840G

    Abstract: IRFZ24N IRFz24n equivalent
    Contextual Info: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24NPbF O-220 IRFI84 IRFI840G IRFI840G IRFZ24N IRFz24n equivalent PDF

    IRFIZ24V

    Contextual Info: PD - 94102 IRFIZ24V Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.060Ω


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    IRFIZ24V O-220 IRFIZ24V PDF

    IRFIZ24E

    Contextual Info: PD -9.1673A International XöR Rectifier IRFIZ24E HEXFET Power M O SFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d s s = 60 V ^DS on = 0.071 Q


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    IRFIZ24E IRFIZ24E PDF

    Contextual Info: PD - 94875 IRFIZ24GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIZ24GPbF 2 www.irf.com IRFIZ24GPbF www.irf.com 3 IRFIZ24GPbF 4 www.irf.com IRFIZ24GPbF www.irf.com 5 IRFIZ24GPbF 6 www.irf.com IRFIZ24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


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    IRFIZ24GPbF O-220 PDF

    SiHFIZ24G

    Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


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    IRFIZ24G, SiHFIZ24G O-220 12-Mar-07 PDF

    Contextual Info: PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description D VDSS = 55V RDS on = 0.07Ω G ID = 14A S Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24NPbF O-220 IRFI84 IRFI840G PDF

    Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 55V l RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24N O-220 insulatin245, PDF

    irf 480

    Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
    Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


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    IRFIZ24E O-220 irf 480 IRFIZ24E IRFZ24N IRFz24n equivalent PDF