IRFIBF30GPBF Search Results

IRFIBF30GPBF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFIBF30GPBF		International Rectifier	900V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package	Original	PDF	931.09KB	7
IRFIBF30GPBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 1.9A TO220FP	Original	PDF		8

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Vishay Siliconix IRFIBF30GPBF MOSFET N-CH 900V 1.9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFIBF30GPBF	Tube	888		1	1 $4.03 10 $4.03 100 $1.81 1000 $1.65 10000 $1.63	Buy Now
ComSIT USA	IRFIBF30GPBF		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFIBF30GPBF MOSFET N-CHANNEL 900V - Tape and Reel (Alt: IRFIBF30GPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFIBF30GPBF	Reel		70 Weeks	1,000	1 - 10 - 100 - 1000 $1.63 10000 $1.56	Buy Now
Mouser Electronics	IRFIBF30GPBF		1,237			1 $4.03 10 $1.82 100 $1.81 1000 $1.73 10000 $1.62	Buy Now
Newark	IRFIBF30GPBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.34 10000 $2.22	Buy Now
RS	IRFIBF30GPBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.07 10000 $1.97	Get Quote
Future Electronics	IRFIBF30GPBF	Box			1,000	1 - 10 - 100 $1.83 1000 $1.78 10000 $1.74	Buy Now

TTI	IRFIBF30GPBF	Tube			1,000	1 - 10 - 100 - 1000 $1.65 10000 $1.63	Buy Now
TME	IRFIBF30GPBF				1	1 $1.64 10 $1.31 100 $1.18 1000 $1.10 10000 $1.10	Get Quote
Avnet Asia	IRFIBF30GPBF			72 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IRFIBF30GPBF		350	71 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	IRFIBF30GPBF				1,000	1 - 10 - 100 - 1000 $2.37 10000 $2.24	Buy Now

IRFIBF30GPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF	Original	IRFIBF30GPbF O-220 08-Mar-07	PDF
Contextual Info: PD - 94874 IRFIBF30GPbF • Lead-Free 1 IRFIBF30GPbF 2 IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2	Original	IRFIBF30GPbF O-220	PDF
Contextual Info: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	IRFIBF30GPbF O-220	PDF
Contextual Info: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	IRFIBF30GPbF O-220	PDF
91186 Contextual Info: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF	Original	IRFIBF30GPbF O-220 12-Mar-07 91186	PDF
IRFIBF30GPBF Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3 Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3	PDF
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 11-Mar-11	PDF
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter	PDF
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFIBF30GPBF Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3 Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3	PDF

IRFIBF30G Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm	Original	IRFIBF30G, SiHFIBF30G O-220 12-Mar-07 IRFIBF30G	PDF