IRFI1010N EQUIVALENT Search Results

IRFI1010N

Contextual Info: PD - 9.1373A International IGR Rectifier IRFI1010N HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 55V R o s o n = 0 . 0 1 2 Q

IRF1010

Abstract: IRFI1010N IRF1010N IRFI840G
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1010N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

f1010e

Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

F1010E

Abstract: MOSFET IRF 630 IRF 260 N irf 409 IRFI1010N equivalent IRFI1010N 43A MARKING CODE IRF1010N Equivalent IRF 44
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

f1010e

Abstract: MOSFET IRF 630 IRFI1010N equivalent irf 540 mosfet irf 480 IRF1010N IRFI1010N IRF 260 N irf 9246 sis 630 et
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

IRF110

Contextual Info: i International [^Rectifier PD 9.1373 IRFI101 ON PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 55V RDS on = 0.012Î2 lD = 44A

IRFZ44G

Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Contextual Info: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.