IRFF32 Search Results

Contextual Info: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s

Contextual Info: h a IRFF320, IRFF321, IRFF322, IRFF323 r r i s ” “ ICONDUCTOE 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

DM 321

Abstract: F320 IRFF320 IRFF321 IRFF322 IRFF323
Contextual Info: 1ÛE-D SILICONIX INC Û254735 0014017 4 • IRFF320/321/322/323 • □ r"StlÌCG S ilic o n_ ix J lM ■ in ii c o rp o ra te d N-Channel Enhancement Mode Transistors T - 3 R -O ^ TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF320 " V Id (A

irff323

Abstract: IRFF322 8 A diode
Contextual Info: HST FIELD EFFECT POWER TRANSISTOR IRFF322,323 2.0 AMPERES 400, 350 VOLTS RDS ON = 2.5 ft Preliminary This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­

SMM70N05

Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
Contextual Info: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113

ifr 350 mosfet

Abstract: IRFF323 IRFF320 IRFF321 IRFF322
Contextual Info: Standard Power MOSFETs- IRFF320, IRFF321, IRFF322, IRFF323 File Number N-Channel Enhancement-Mode Power Field-Effecl Transistors 2.0A and 2.5A, 350V - 400V rDsion = 1-80 and 2.50 N-CHANNEL ENHANCEMENT MODE o Features: • SOA is power-dissipation limited

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated*

mosfet vgs 5v

Abstract: n-channel mosfet transistor IRFF320 mosfet MOSFET QG IRF710B
Contextual Info: Discrete MOSFET TO-39 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) use IRF710B - - - - Config. Maximum Rating ID (A) PD (W) - - TO-39 N-Channel IRFF320 400 Single Note: Unless otherwise specified, QG is given @ 5VGS for MOSFETs with ratings of 30VDS and below.

SMM70N06

Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
Contextual Info: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5

IRFF320

Abstract: JANTX2N6792 JANTXV2N6792
Contextual Info: PD -90428C IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF320 BVDSS 400V RDS(on) 1.8Ω ID 2.0A  The HEXFET technology is the key to International

Contextual Info: IRFF320 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF320 2N6792 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 400V

Contextual Info: 23 H A R R IS IBFF320/321/322/323 IRFF320R/321R/322R/323R N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T 0 -2 0 5 A F • 2.0A and 2.5A, 350V - 400V • ros on = 1-80 and 2.5fi • Single Pulse Avalanche Energy Rated*

Contextual Info: IRFF321 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.5# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)10# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ

Contextual Info: IRFF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ

IRFF320

Contextual Info: IRFF320 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

IRFF320R

Abstract: IRFF323R IRFF321R IRFF322R
Contextual Info: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■

IRFF323

Contextual Info: IRFF320, IRFF321, IRFF322, IRFF323 S E M I C O N D U C T O R 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFF322 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ

IRF 534

Abstract: IRFF320 JANTX2N6792 JANTXV2N6792
Contextual Info: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: IRFF320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D)1.25 @Temp (øC)100# IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS