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Catalog Datasheet	Type	Document Tags	PDF
IRFC3815B Abstract: IRFC3815 Contextual Info: PD - 95827 IRFC3815B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description	Original	IRFC3815B O-274 100nA IRFC3815B IRFC3815	PDF

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IRFC3815B

Abstract: IRFC3815
Contextual Info: PD - 95827 IRFC3815B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

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IRFC3815B O-274 100nA IRFC3815B IRFC3815

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