IRF9Z Search Results

IRF9Z34

Abstract: IRF9Z34PBF
Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9Z24L

Abstract: IRF9Z24S SiHF9Z24S
Contextual Info: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

IRF9Z20

Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

IRF9Z34

Abstract: SiHF9Z34 SiHF9Z34-E3
Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

pj 67 diode

Abstract: PJ 63 MM diode IRF9Z14 SAJ 220
Contextual Info: PD-9.736 International S Rectifier IRF9Z14 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "60 V ^DS on = 0 -5 0 Q

Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

AN609

Abstract: IRF9Z34 SiHF9Z34
Contextual Info: IRF9Z34_RC, SiHF9Z34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

IRF9Z10

Abstract: DIODE NU
Contextual Info: PD - 90459A IRF9Z10 D G D S TO-220AB www.irf.com G D S Gate Drain Source 1 06/24/05 IRF9Z10 2 www.irf.com IRF9Z10 www.irf.com 3 IRF9Z10 4 www.irf.com IRF9Z10 www.irf.com 5 IRF9Z10 6 www.irf.com IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

Contextual Info: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated

f1010

Contextual Info: PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088

Contextual Info: PD- 95415 IRF9Z24PbF • Lead-Free Document Number: 91090 06/14/04 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF9Z24NLPBF

Abstract: IRL3103L IRF9Z24NS
Contextual Info: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF

Contextual Info: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching

Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

marking F53

Abstract: IRF9Z34NL IRF9Z34NS
Contextual Info: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω

Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10" G ID = -19A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier

irf 418

Abstract: IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N
Contextual Info: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free 1 IRF9Z34NS/LPbF 2 IRF9Z34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"

IRF9Z14PBF

Contextual Info: PD - 95628 IRF9Z14PbF • Lead-Free 1 IRF9Z14PbF 2 IRF9Z14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching