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    IRF9Z Search Results

    IRF9Z Datasheets (197)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF9Z10
    International Rectifier HEXFET Power MOSFET Original PDF 370.35KB 8
    IRF9Z10
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original PDF 8
    IRF9Z10
    International Rectifier TO-220 HEXFET Power MOSFET Scan PDF 41.94KB 1
    IRF9Z10
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.3KB 1
    IRF9Z10
    Unknown FET Data Book Scan PDF 105.92KB 2
    IRF9Z10
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.42KB 1
    IRF9Z10
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.05KB 1
    IRF9Z10PBF
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original PDF 8
    IRF9Z10PBF-BE3
    Vishay Siliconix MOSFET P-CH 60V 6.7A TO220AB Original PDF 139.09KB
    IRF9Z10S
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.42KB 1
    IRF9Z10STRL
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.42KB 1
    IRF9Z10STRR
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.42KB 1
    IRF9Z12
    International Rectifier TO-220 HEXFET Power MOSFET Scan PDF 41.94KB 1
    IRF9Z12
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.3KB 1
    IRF9Z12
    Unknown FET Data Book Scan PDF 105.92KB 2
    IRF9Z12
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.05KB 1
    IRF9Z14
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF9Z14
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO-220AB Original PDF 8
    IRF9Z14
    International Rectifier Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) Scan PDF 177.18KB 6
    IRF9Z14
    International Rectifier TO-220 Plastic Package HEXFETs Scan PDF 100.13KB 1
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    IRF9Z Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies IRF9Z30PBF-BE3

    MOSFET P-CH 50V 18A TO220AB
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    Vishay Intertechnologies IRF9Z24SPBF

    MOSFET P-CH 60V 11A D2PAK
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    Vishay Intertechnologies IRF9Z34STRLPBF

    MOSFET P-CH 60V 18A D2PAK
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    Arrow Electronics IRF9Z34STRLPBF Cut Strips 163 40 Weeks 1
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    Vishay Intertechnologies IRF9Z34PBF

    MOSFET P-CH 60V 18A TO220AB
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    Mouser Electronics IRF9Z34PBF 6,778
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    Vishay Intertechnologies IRF9Z14PBF-BE3

    MOSFET P-CH 60V 6.7A TO220AB
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    IRF9Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF9Z34

    Abstract: IRF9Z34PBF
    Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9Z34 IRF9Z34PBF PDF

    IRF9Z24L

    Abstract: IRF9Z24S SiHF9Z24S
    Contextual Info: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)


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    IRF9Z24S, SiHF9Z24S IRF9Z24L, SiHF9Z24L 2002/95/EC 11-Mar-11 IRF9Z24L IRF9Z24S PDF

    IRF9Z20

    Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
    Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


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    IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 11-Mar-11 IRF9Z20 IRF9Z22 SiHF9Z20-E3 PDF

    IRF9Z34

    Abstract: SiHF9Z34 SiHF9Z34-E3
    Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRF9Z34 SiHF9Z34-E3 PDF

    pj 67 diode

    Abstract: PJ 63 MM diode IRF9Z14 SAJ 220
    Contextual Info: PD-9.736 International S Rectifier IRF9Z14 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "60 V ^DS on = 0 -5 0 Q


    OCR Scan
    IRF9Z14 O-220 -60Ve pj 67 diode PJ 63 MM diode IRF9Z14 SAJ 220 PDF

    Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    AN609

    Abstract: IRF9Z34 SiHF9Z34
    Contextual Info: IRF9Z34_RC, SiHF9Z34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRF9Z34 SiHF9Z34 AN609, 29-Mar-10 AN609 PDF

    Contextual Info: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated


    OCR Scan
    IRF9Z24NS) IRF9Z24NL) PDF

    IRF9Z10

    Abstract: DIODE NU
    Contextual Info: PD - 90459A IRF9Z10 D G D S TO-220AB www.irf.com G D S Gate Drain Source 1 06/24/05 IRF9Z10 2 www.irf.com IRF9Z10 www.irf.com 3 IRF9Z10 4 www.irf.com IRF9Z10 www.irf.com 5 IRF9Z10 6 www.irf.com IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


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    0459A IRF9Z10 O-220AB O-220AB IRF9Z10 DIODE NU PDF

    Contextual Info: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated


    OCR Scan
    IRF9Z24NS/L IRF9Z24NS) IRF9Z24NL) PDF

    f1010

    Contextual Info: PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088


    Original
    IRF9Z14PbF 12-Mar-07 f1010 PDF

    Contextual Info: PD- 95415 IRF9Z24PbF • Lead-Free Document Number: 91090 06/14/04 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090


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    IRF9Z24PbF O-220AB 15ability, PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    IRF9Z14/Z15 IRF9Z10/Z12 O-220 IRF9Z10 7Tb4142 00122C PDF

    IRF9Z24NLPBF

    Abstract: IRL3103L IRF9Z24NS
    Contextual Info: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF


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    IRF9Z24NSPbF IRF9Z24NLPBF IRF9Z24NS/LPbF EIA-418. IRF9Z24NLPBF IRL3103L IRF9Z24NS PDF

    Contextual Info: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching


    OCR Scan
    0D14R14 IRF9Z14 O-220 55M52 PDF

    Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


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    IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF

    marking F53

    Abstract: IRF9Z34NL IRF9Z34NS
    Contextual Info: PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z34NS l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.10Ω


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    IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) marking F53 IRF9Z34NL IRF9Z34NS PDF

    Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    1484B IRF9Z24N O-220 appli245, PDF

    Contextual Info: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10" G ID = -19A S Fifth Generation HEXFETs from International Rectifier


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    IRF9Z34NPbF O-220 O-220AB PDF

    Contextual Info: PD - 94983 IRF9Z34NPbF Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


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    IRF9Z34NPbF O-220 O-220AB. O-220AB PDF

    irf 418

    Abstract: IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N
    Contextual Info: PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free 1 IRF9Z34NS/LPbF 2 IRF9Z34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"


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    IRF9Z34NSPbF IRF9Z34NLPbF IRF9Z34NS/LPbF F530S EIA-418. irf 418 IRF 504 D2Pak Package dimensions IRf 634 IRF9Z34N PDF

    IRF9Z14PBF

    Contextual Info: PD - 95628 IRF9Z14PbF • Lead-Free 1 IRF9Z14PbF 2 IRF9Z14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


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    IRF9Z14PbF O-220AB O-220AB. IRF9Z14PBF PDF

    Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


    Original
    IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF