IRF9 Search Results

IRF9Z34

Abstract: IRF9Z34PBF
Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9Z24L

Abstract: IRF9Z24S SiHF9Z24S
Contextual Info: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

IRF9510S

Contextual Info: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21

IRF9530S

Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

transistor mosfet irf9530

Abstract: IRF9530 transistor irf9530
Contextual Info: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol

IRF9Z20

Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

IRF9Z34

Abstract: SiHF9Z34 SiHF9Z34-E3
Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

pj 68 SMD diode

Abstract: 1519J SMD diode 18b 5c DIODE SMD 10 25 m6 smd diode pj 55 MARKING 1AB AN-994 IRF9610S SMD-220 0/smd diode pj 55
Contextual Info: International Rectifier IRF9610S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V D S S = - 2 0 0 V R DS on = 3 -0 ß l D

pj 67 diode

Abstract: PJ 63 MM diode IRF9Z14 SAJ 220
Contextual Info: PD-9.736 International S Rectifier IRF9Z14 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "60 V ^DS on = 0 -5 0 Q

Contextual Info: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free Document Number: 91074 06/15/04 www.vishay.com 1 IRF9520PbF Document Number: 91074 www.vishay.com 2 IRF9520PbF Document Number: 91074 www.vishay.com 3 IRF9520PbF Document Number: 91074 www.vishay.com 4 IRF9520PbF Document Number: 91074

Contextual Info: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements

Contextual Info: PD- 95410 IRF9510PbF • Lead-Free Document Number: 91072 06/15/04 www.vishay.com 1 IRF9510PbF Document Number: 91072 www.vishay.com 2 IRF9510PbF Document Number: 91072 www.vishay.com 3 IRF9510PbF Document Number: 91072 www.vishay.com 4 IRF9510PbF Document Number: 91072

Contextual Info: PD- 95413 IRF9610PbF • Lead-Free Document Number: 91080 06/15/04 www.vishay.com 1 IRF9610PbF Document Number: 91080 www.vishay.com 2 IRF9610PbF Document Number: 91080 www.vishay.com 3 IRF9610PbF Document Number: 91080 www.vishay.com 4 IRF9610PbF Document Number: 91080

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

AN609

Abstract: IRF9630S SiHF9630S
Contextual Info: IRF9630S_RC, SiHF9630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SiHF9530S-E3

Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel

AN609

Abstract: IRF9540 SiHF9540
Contextual Info: IRF9540_RC, SiHF9540_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF9640S

Abstract: IRF9640 SiHF9640S SiHF9640S-E3 IRF9640STRRPBF
Contextual Info: IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single G G G D S Surface Mount Available in Tape and Reel

AN609

Abstract: IRF9Z34 SiHF9Z34
Contextual Info: IRF9Z34_RC, SiHF9Z34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF9130

Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf9240

Contextual Info: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.