IRF75 Search Results

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

ir*526

Abstract: IRF7526D1
Contextual Info: PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Description A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -30V

IRF7501

Contextual Info: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2

EIA-541

Abstract: IRF7503
Contextual Info: PD - 9.1266G IRF7503 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = 30V

IRF750

Contextual Info: IRF750 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

027SS

Contextual Info: PD * 9.1269G International IGR Rectifier IRF7507 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel M OSFET Very Small SO IC Package Low Profile <1.1 mm Available in Tape and Reel Fast Switching

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

897m

Abstract: marking 2U 95 diode marking DIODE 2U 04
Contextual Info: PD 9.1265F International IG R Rectifier IRF7501 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching

EIA-541

Abstract: ce 2752
Contextual Info: PD - 95696 IRF7506PbF • Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS DIM D MIN .044 0.91 1.11

Contextual Info: P D - 9 .1 2 6 5 G International IO R Rectifier IRF7501 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel M O S F E T Very Small S O IC Package Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: P D - 9.1268F International IQ R Rectifier IRF7506 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel

diodo 007

Contextual Info: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =

Contextual Info: PD -9.1649 International IQR Rectifier IRF7526D1 PRELIMINARY FETKY M O S F E T and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint

Contextual Info: IRF7504 Transistors Matched Pair of P-Channel Enhancement MOSFETs V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)70 IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)390m Minimum Operating Temp (øC)-55

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

Contextual Info: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: PD - 95696 IRF7506PbF • Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS INCHES DIM D MIN .036 .044

96176

Contextual Info: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free A A S G 1 8 K 2 7 K 3 6

Contextual Info: PD -95437 IRF7526D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Description FETKY TM MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5

Contextual Info: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

p-channel 250V 30A power mosfet

Contextual Info: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.055W

EIA-541

Abstract: IRF7501
Contextual Info: PD - 95243 IRF7530PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm lAvailable in Tape & Reel l Lead-Free l l 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = 20V RDS(on) = 0.030Ω

50V Dual N-Channel HEXFET Power MOSFET in a SO-8

Abstract: EIA-541 IRF7530
Contextual Info: PD-93760C IRF7530 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω