IRF732 Search Results

IRF7101

Abstract: IRF7324D1
Contextual Info: PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V RDS on = 0.18Ω

Contextual Info: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2

Contextual Info: IRF7324PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -4.5V) -20 V 0.018 Ω 42 nC -9.0 A Qg (typical) ID (@TA = 25°C) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

KY 189

Abstract: EIA-541 IRF7807D1 IRF7326D2PBF
Contextual Info: PD - 95311 IRF7326D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7326D2PbF 2 www.irf.com IRF7326D2PbF www.irf.com 3 IRF7326D2PbF 4 www.irf.com IRF7326D2PbF www.irf.com 5 IRF7326D2PbF 6 www.irf.com IRF7326D2PbF SO-8 Fetky Package Outline D DIM B 8 6 7 6 MIN

Laptop battery charge control circuit

Abstract: 12v charge control 12V to 5V buck boost converter lcds Laptop battery circuit hard disk ir*526 IRF7321D2 buck converter irf7326d2
Contextual Info: JULY 1998  Target Applications FETKY Standard Buck Converter Buck/Boost Converter ♠ ♠ LOAD LOAD CONTROL CONTROL • Example: 5V input to 3.3V output application for hard disc drive • Target notebook PCs, hard disk drives, LCDs and printers • IRF7321D2, IRF7322D1, IRF7324D1, IRF7326D2, IRF7422D2

so 498 G

Contextual Info: IRF7322D1 SO-8 Package Details D IM D -B - 5 E -A - 5 θ 8 7 6 5 1 2 3 4 e 6X H 0.2 5 .0 10 M A A M θ e1 -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.

EIA-541

Abstract: IRF7101
Contextual Info: PD - 95460 IRF7324PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile <1.1mm ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● ● S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -20V RDS(on) = 0.018Ω

IRF7329

Abstract: F7101 IRF7101 MS-012AA P-channel power mosfet SO-8 30V 9.2A 20
Contextual Info: PD- 94095 IRF7329 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile <1.8mm ● Available in Tape & Reel ● ● VDSS Ω) RDS(on) max (mΩ) ID 17@VGS = -4.5V 21@VGS = -2.5V ±9.2A -12V 30@VGS = -1.8V

24VGS

Abstract: F7101 IRF7101 IRF7325 MS-012AA
Contextual Info: PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile <1.8mm ● Available in Tape & Reel ● ● VDSS Ω) RDS(on) max (mΩ) ID -12V 24@VGS = -4.5V 33@VGS = -2.5V ±7.8A 49@VGS = -1.8V

IRF7326D2

Abstract: IRF7101
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

RF730

Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
Contextual Info: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:

IRF730

Abstract: IRF731 IRF733 IRF732 K 3911 K 3911 mosfet
Contextual Info: HE 0 I MÖ5S4S2 000053t, □ | Data Sheet No. PD-9.308J INTERNATIONAL RE CT IFIE R INTERNATIONAL RECTIFIER IOR T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* IRF730 IRF731 IRF732 IRF733 HEXFET TRAIMSISTOR5 N-CHANNEL 400 Volt, 1.0 Ohm HEXFET TO-220AB Plastic Package

807D1

Abstract: jedec package standards so8 2440 so-8
Contextual Info: PD - 95309 IRF7324D1PbF • Lead-Free www.irf.com 1 10/13/04 IRF7324D1PbF 2 www.irf.com IRF7324D1PbF www.irf.com 3 IRF7324D1PbF 4 www.irf.com IRF7324D1PbF www.irf.com 5 IRF7324D1PbF 6 www.irf.com IRF7324D1PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7

IC power 22A Regulator

Abstract: IRF7807D1
Contextual Info: PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint Lead-Free A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS on = 0.27Ω

Contextual Info: PD - 95196A IRF7328PbF HEXFET Power MOSFET lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿ Available in Tape & Reel lÿ Lead-Free VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from

tl 451

Abstract: irf 44 n
Contextual Info: IRF7322D1 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 .484 11 .7 ( .461 ) 8.1 ( .31 8 ) 7.9 ( .31 2 ) F E E D D IR E C T IO N N OTE S : 1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R. 2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ).

P-channel power mosfet SO-8 30V 9.2A 20

Abstract: EIA-541 IRF7101 MS-012AA
Contextual Info: PD - 95042 IRF7329PbF HEXFET Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.8mm Available in Tape & Reel Lead-Free VDSS RDS(on) max (mW) ID 17@VGS = -4.5V 21@VGS = -2.5V ±9.2A -12V 30@VGS = -1.8V

IRF7328

Contextual Info: IRF7328 Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance

IRF730

Abstract: IRF732 mtm5n35 GR 733
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF730 IRF731 IRF732 IRF733 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T h e se T M O S P o w e r FETs are d es igne d fo r high v o lta g e , high speed p o w e r sw itch in g ap p lication s

IRF7321D2

Abstract: SiC POWER MOSFET
Contextual Info: PD - 91667B IRF7321D2 PRELIMINARY TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETÒ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFETÒ Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1

schottky diode 100A

Abstract: HEXFET SO-8 Schottky Diode 50V 3A IRF7322D1
Contextual Info: PD- 91705 IRF7322D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

ed 77A DIODE

Abstract: IRF7322D1
Contextual Info: PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

IRF7324

Contextual Info: PD -93799A IRF7324 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.1mm Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω

IRF7321D2

Abstract: ed 77A DIODE
Contextual Info: PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K