IRF640 APPLICATIONS NOTE Search Results

TP20N20E

Abstract: IRF640
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Contextual Info: IRF640, RF1S640SM Data Sheet Title F64 1S6 SM bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRF640 smd

Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A

IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

IRF640 applications note

Abstract: IRF640 circuit
Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

IRF640

Abstract: IRF640 equivalent IRF640 mosfet IRF640 applications note power MOSFET IRF640 IRF640 n-channel MOSFET
Contextual Info: DC COMPONENTS CO., LTD. IRF640 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.18 Ohm ID = 18 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

irf640

Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
Contextual Info: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)

2N7001

Abstract: CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840
Contextual Info: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

IRF640L

Abstract: IRF640S SiHF640S IRF640STRRPBF
Contextual Info: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating

EF25 TRANSFORMER

Abstract: EFD25-10 UC3965D IRF640 applications note Rt 28200 UCC3808 UDG-99076 UCC3808-1 2N2222A UCC1808-X
Contextual Info: UCC1808-1/-2 UCC2808-1/-2 UCC3808-1/-2 Low Power Current Mode Push-Pull PWM FEATURES DESCRIPTION • 130µA Typical Starting Current The UCC3808 is a family of BiCMOS push-pull, high-speed, low power, pulse width modulators. The UCC3808 contains all of the control and drive

IRF640S Vishay Siliconix

Abstract: IRF640SPBF
Contextual Info: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating

SLUS456A

Contextual Info: UCC2808AĆ1, UCC2808AĆ2, UCC3808AĆ1, UCC3808AĆ2 LOW POWER CURRENT MODE PUSHĆPULL PWM ą SLUS456A – APRIL 1999 - REVISED OCTOBER 2000 D D D D D D D D 130-µA Typical Starting Current 1-mA Typical Run Current Operation to 1 MHz Internal Soft Start On-Chip Error Amplifier with 2-MHz Gain

EF25 TRANSFORMER

Abstract: er28 transformer SLUS456 2K12907 er28 core ferrite UCC2808A UCC3808 UCC3808A circuit using irf640
Contextual Info: UCC2808AĆ1, UCC2808AĆ2, UCC3808AĆ1, UCC3808AĆ2 LOW POWER CURRENT MODE PUSHĆPULL PWM ą SLUS456C – APRIL 1999 - REVISED JUNE 2002 D D D D D D D D 130-µA Typical Starting Current 1-mA Typical Run Current Operation to 1 MHz Internal Soft Start On-Chip Error Amplifier With 2-MHz Gain

Contextual Info: UCC2808AĆ1, UCC2808AĆ2, UCC3808AĆ1, UCC3808AĆ2 LOW POWER CURRENT MODE PUSHĆPULL PWM ą SLUS456B – APRIL 1999 - REVISED FEBRUARY 2001 D D D D D D D D 130-µA Typical Starting Current 1-mA Typical Run Current Operation to 1 MHz Internal Soft Start On-Chip Error Amplifier With 2-MHz Gain

UCC3808-2

Abstract: UCC2808 UCC2808-1 UCC2808-2 UCC3808 UCC3808-1 BYV 30 45
Contextual Info: UCC2808-1, UCC2808-2, UCC3808-1, UCC3808-2 LOW POWER CURRENT MODE PUSH-PULL PWM ą SLUS168D – APRIL 1999 – REVISED AUGUST 2002 D Dual Output Drive Stages in Push-Pull D D D D D D D D OR N PACKAGE TOP VIEW Configuration 130-µA Typical Starting Current

UCC2808 application notes

Abstract: UCC2808 test circuit UCC2808-1 EF25 TRANSFORMER power MOSFET IRF640 UCC2808-2 UCC3808 UCC3808-1 UCC3808-2 UDG-99076
Contextual Info: UCC2808-1, UCC2808-2, UCC3808-1, UCC3808-2 LOW POWER CURRENT MODE PUSH-PULL PWM ą SLUS168B – APRIL 1999 – REVISED JUNE 2002 D D D D D D D D D OR N PACKAGE TOP VIEW 130-µA Typical Starting Current 1-mA Typical Run Current Operation to 1-MHz Internal Soft Start

UCC2808A

Abstract: UCC3808 UCC3808A
Contextual Info: UCC2808AĆ1, UCC2808AĆ2, UCC3808AĆ1, UCC3808AĆ2 LOW POWER CURRENT MODE PUSHĆPULL PWM ą SLUS456D – APRIL 1999 - REVISED AUGUST 2002 D Dual Output Drive Stages in Push-Pull D D D D D D D D D OR N PACKAGE TOP VIEW Configuration Current Sense Discharge Transistor to