IRF630 N CHANNEL Search Results

IRF630

Abstract: mosfet irf630fp IRF630FP JESD97
Contextual Info: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

IRF630

Abstract: irf630 mosfet
Contextual Info: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

irf630

Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
Contextual Info: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

IRF630

Abstract: IRF630FP
Contextual Info: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630
Contextual Info: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ VDSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

IRF630 MOTOR CONTROL CIRCUIT

Contextual Info: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

irf630

Abstract: irf630 equivalent schematic diagram UPS 600 Power free IRF630FP MOSFET IRF630
Contextual Info: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: mosfet morocco IRF630FP IRF630 p
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

IRF630

Abstract: IRF630FP
Contextual Info: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

irf630

Abstract: mosfet irf630
Contextual Info: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Contextual Info: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

irf630

Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve
Contextual Info: Standard Power M O SFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power M O S Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V rDs on = 0.4 Cl and 0.6 fi Features:

irf630

Contextual Info: N-CHANNEL POWER MOSFETS IRF630/631 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe operating area • Improved high temperature reliability

IRF632 datasheet

Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Contextual Info: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

irf630

Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

irf630

Abstract: pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company N-CHANNEL ENHANCEMENT MODE FIELD EFFECT POWER TRANSISTOR IRF630 TO-220 Plastic Package High Switching Speed, Low Static Drain-Source On Resistance ABSOLUTE MAXIMUM RATINGS Ta=25oC unless specified otherwise

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid

irf630

Abstract: rf1s630sm9a IRF630 Fairchild
Contextual Info: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power

200v mosfet

Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
Contextual Info: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER

IRF630

Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
Contextual Info: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

IRF630

Abstract: TD 1409
Contextual Info: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol