IRF530 APPLICATION Search Results

AN569

Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high

IRF530

Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

DM 321

Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Contextual Info: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate

IRF530

Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

IRF530

Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Contextual Info: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V

irf530

Abstract: 929E-10 IRF530 fairchild
Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power

RF1S540

Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530 mosfet

Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530 marking

Abstract: irf530
Contextual Info: 4Ô55M52 DOlMbSb DbS International Rectifier 11NR PD-9.3070 IRF530 HEXFET Power M O S F E T bSE T> INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

TA17411

Contextual Info: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

RF530

Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS

IRF530

Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF530

Abstract: IRF530 marking
Contextual Info: PD-9.3070 International [I«R ]Rectifier IRF530 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS=100V R DS on = 0 - 1 6 0

cds photo diode

Abstract: IRF530 marking
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF530

Contextual Info: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

pj 69 diode

Abstract: F533R IRF530 IRF
Contextual Info: 2 HARRIS IRF530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* ay 1992 Features • Package T0220AB 12A and 14A, 80V - 100V TO P VIEW • rDS °n = 0.16 fl and 0.23ft • Single Pulse Avalanche Energy Rated* DRAIN (F L A N G E )

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF530 vishay

Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

IC5011

Abstract: 4515V irf530g
Contextual Info: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit

IRF530

Contextual Info: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing

international rectifier mosfet

Abstract: Internal circuit diagram of ups K1 mosfet irf530
Contextual Info: HV100 / HV101 Preliminary Specification 3 Pin Hot Swap Controller Features ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ General Description 2 33% Smaller Than SOT-23 Pass Element is Only External Part Auto-adapts* to Pass Element Short Circuit Protection on startup* UV & POR Supervisory Circuits