IRF530 Search Results

IRF530S

Abstract: SiHF530S SiHF530S-E3 910-20-11
Contextual Info: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

AN-994

Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

Contextual Info: PD- 95982 IRF530SPbF • Lead-Free Document Number: 91020 12/21/04 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF530SPBF

Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL
Contextual Info: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF5305

Contextual Info: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier

IRF530N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

IRF530N

Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

IRF530

Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
Contextual Info: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

IRF530N

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

2CS-42724

Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
Contextual Info: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì

RF530

Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS

Contextual Info: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating

D84DL2

Abstract: IRF530 N-Channel fet
Contextual Info: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

DM 321

Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Contextual Info: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate

Contextual Info: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V

IRF530N

Abstract: IRF530N applications
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ

irf530

Contextual Info: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRF530 vishay

Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF530

Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF530

Contextual Info: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

IRF5305L

Abstract: IRF5305S
Contextual Info: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω