IRF13 Search Results

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF1310N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

IRF1302L

Abstract: IRF1302S
Contextual Info: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

D86DL2

Abstract: IRF130 CPD75
Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES

ir 429c

Abstract: AN-994 IRF1324S-7P 429AD 429C
Contextual Info: PD - 97263A IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

smd diodes s4 1.5w

Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
Contextual Info: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )

irf130

Contextual Info: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International

Contextual Info: PD - 94591 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax IRF1302 HEXFET Power MOSFET D VDSS = 20V

Contextual Info: IRF130SMD MECHANICAL DATA Dimensions in mm inches 0 .8 9 (0 .0 3 5 ) m in .  3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )

IRF130

Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
Contextual Info: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN-994

Abstract: 5MAD IRF1324S-7PPBF 429AD High Efficiency Synchronous Rectification in SMPS IRF1324S-7P
Contextual Info: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

Contextual Info: PD- 95409 IRF1312PbF IRF1312S IRF1312L HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies TO-220 is available in PbF as a Lead-Free VDSS 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

IRF130

Abstract: irf131 142SA
Contextual Info: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

1RF130

Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
Contextual Info: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors

irf130

Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
Contextual Info: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN1001

Abstract: IRF1312 IRF1312L IRF1312S IRF530S IRL3103L
Contextual Info: PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

irf7309

Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Contextual Info: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S

Contextual Info: IRF130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100 IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

MJ 15005 transistor

Abstract: ir 429c IRF 1640 IRF1324S AN-994 IRF1324S-7PPBF 7PPB
Contextual Info: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits